. "1109-9445" . "P(GA102/05/2095), Z(MSM0021630503)" . . "Tacano, Munecazu" . . . "Noise Spectroscopy of GaN/AlGaN HFETs"@en . . "4"^^ . "WSEAS Transactions on Electronics" . . . "4" . . . . "Tanuma, Nobuhisa" . . "RIV/00216305:26220/08:PU73782" . . "2"^^ . "9" . "US - Spojen\u00E9 st\u00E1ty americk\u00E9" . "Noise Spectroscopy of GaN/AlGaN HFETs" . "\u0160ikula, Josef" . "Noise characteristics of epitaxial n-GaN on sapphire layers and GaN/AlGaN on sapphire or SiC HFET structures were investigated in the temperature range from 13K to 300K. Ohmic contacts were made using Ti/Al/Ni/Au and contact noise was found negligible by TLM analysis. The Hooge parameter alfa of epitaxial GaN was 2x10-3 at 300K, gradually decreasing to 10-4 around 50K. For GaN/AlGaN on sapphire HFET the g-r noise was dominant at almost every temperature, allowing only to determine alfa = 2x10-4 at 22K. The GaN/AlGaN on SiC HFETs were characterized by alfa values of 10-4 to 10-5."@en . "Pavelka, Jan" . "[F62956390E8E]" . . . . . "Noise Spectroscopy of GaN/AlGaN HFETs" . "RIV/00216305:26220/08:PU73782!RIV10-MSM-26220___" . "4"^^ . . "382834" . . . "Noise Spectroscopy of GaN/AlGaN HFETs"@en . "Noise characteristics of epitaxial n-GaN on sapphire layers and GaN/AlGaN on sapphire or SiC HFET structures were investigated in the temperature range from 13K to 300K. Ohmic contacts were made using Ti/Al/Ni/Au and contact noise was found negligible by TLM analysis. The Hooge parameter alfa of epitaxial GaN was 2x10-3 at 300K, gradually decreasing to 10-4 around 50K. For GaN/AlGaN on sapphire HFET the g-r noise was dominant at almost every temperature, allowing only to determine alfa = 2x10-4 at 22K. The GaN/AlGaN on SiC HFETs were characterized by alfa values of 10-4 to 10-5." . . "26220" . . "GaN, GaN/AlGaN, HFET, HEMT, 1/f noise, g-r noise, Hooge parameter"@en . .