"9" . . "4" . "US - Spojen\u00E9 st\u00E1ty americk\u00E9" . "Z(MSM0021630503)" . . . "Snap-back characteristics tuning of SCR-based semiconductor structures" . . "RIV/00216305:26220/08:PU73709!RIV10-MSM-26220___" . "Snap-back characteristics tuning of SCR-based semiconductor structures"@en . . "Snap-back characteristics tuning of SCR-based semiconductor structures" . . "26220" . . "SCR, snap-back, ESD"@en . "2"^^ . . "Semiconductor structures having snap-back type of I-V characteristics are very useful in ESD (electrostatic discharge) protection design. ESD protection structures act as a protection of integrated circuits against the parasitic electrostatic discharge. The typical protection structure having the snap-back type of I-V characteristic is a SCR (silicon controlled rectifier) or a gate grounded NMOS transistor. This text is dealing with structures which enable tuning of I-V snapback characteristics. The simulated technology was CMOS very high voltage (VHVIC). The measurement was done for samples manufactured in 1.5um BiCMOS." . "2"^^ . "Semiconductor structures having snap-back type of I-V characteristics are very useful in ESD (electrostatic discharge) protection design. ESD protection structures act as a protection of integrated circuits against the parasitic electrostatic discharge. The typical protection structure having the snap-back type of I-V characteristic is a SCR (silicon controlled rectifier) or a gate grounded NMOS transistor. This text is dealing with structures which enable tuning of I-V snapback characteristics. The simulated technology was CMOS very high voltage (VHVIC). The measurement was done for samples manufactured in 1.5um BiCMOS."@en . "6"^^ . . "B\u011B\u0165\u00E1k, Petr" . . . . "[3364BFD82F01]" . "1109-9445" . "Musil, Vladislav" . "RIV/00216305:26220/08:PU73709" . "Snap-back characteristics tuning of SCR-based semiconductor structures"@en . "WSEAS Transactions on Electronics" . . . . . "395467" .