"434326" . . "Modeling of quantization effects in NMOSFET channel" . . . "Recman, Milan" . . "In short channel NMOSFET simulations, the threshold voltage is increased if the quantization effects are present. The contribution describes the influence of quantum mechanical size quantization effects in NMOSFET channel on the electrical properties of NMOS transistor. Normal drift diffusion simulation (neglecting quantum effects), simulations including quantum correction models (van Dort model, the density gradient model) and the simulation including direct solution of the Schroedinger equation are compared. The simulations are run under GENESISe. The tool flow starts with the device editor MDRAW followed by device simulator DESSIS and visualization and extraction tools TECPLOT and INSPECT."@en . "BRNO" . "978-80-214-3470-7" . "RIV/00216305:26220/07:PU71778!RIV08-MSM-26220___" . "popis"@cs . "Z(MSM0021630503)" . "5"^^ . . "[6347D83E7103]" . . "Proceedings of Electronic Devices and Systems EDS`07 IMAPS CS International Conference 2007" . "In short channel NMOSFET simulations, the threshold voltage is increased if the quantization effects are present. The contribution describes the influence of quantum mechanical size quantization effects in NMOSFET channel on the electrical properties of NMOS transistor. Normal drift diffusion simulation (neglecting quantum effects), simulations including quantum correction models (van Dort model, the density gradient model) and the simulation including direct solution of the Schroedinger equation are compared. The simulations are run under GENESISe. The tool flow starts with the device editor MDRAW followed by device simulator DESSIS and visualization and extraction tools TECPLOT and INSPECT." . . . . "Modeling of quantization effects in NMOSFET channel"@en . "Ing. Zden\u011Bk Novotn\u00FD CSc." . . "1"^^ . "Modelov\u00E1n\u00ED kvantiza\u010Dn\u00EDch jev\u016F v NMOSFET kan\u00EDle"@cs . "Modeling of quantization effects in NMOSFET channel"@en . "1"^^ . . "Modelov\u00E1n\u00ED kvantiza\u010Dn\u00EDch jev\u016F v NMOSFET kan\u00EDle"@cs . . . "442-446" . . . "Brno" . . "RIV/00216305:26220/07:PU71778" . . . . "Modeling of quantization effects in NMOSFET channel" . "26220" . "Device simulation, Electrical simulation, Parameter extraction, Device modeling, Curve fitting, 2D, Threshold voltage, Quantization effects, Van Dort model, Density gradient model, Schroedinger-Poisson solver"@en . . . . "2007-09-20+02:00"^^ . . .