"Microplasma noise, GaAsP LED diode, PN junction, Avalanche, Impact ionization"@en . "\u010Cl\u00E1nek pojedn\u00E1v\u00E1 o teoretick\u00FDch a experiment\u00E1ln\u00EDch v\u00FDsledc\u00EDch z\u00EDskan\u00FDch p\u0159i studiu lok\u00E1ln\u00EDch lavinov\u00FDch pr\u016Fraz\u016F zp\u011Btn\u011B polarizovan\u00FDch PN p\u0159echod\u016F GaAsP LED diod."@cs . . . "Slovensk\u00E1 technick\u00E1 univerzita v Bratislave" . "26220" . . . "On the Properties Of GaAsP Diodes Under PN Junction Local Avalanche Breakdown Conditions"@en . "Vlastnosti GaAsP diod p\u0159i lok\u00E1ln\u00EDch lavinov\u00FDch pr\u016Frazech PN p\u0159echodu"@cs . "RIV/00216305:26220/06:PU62989!RIV07-GA0-26220___" . "Koktav\u00FD, Bohumil" . "2"^^ . . . "Bratislava" . . "Bratislava" . "4"^^ . . "P(GA102/06/1551), Z(MSM0021630503)" . "2"^^ . "The present paper is intended to show the results of our theoretical as well as experimental studies of the phenomena that occur in consequence of micro-plasma discharges at localized points of PN junctions of reverse biased GaAs0,60P0,40 LEDs, which in turn manifest themselves as bi-stable or multi-stable noise. A practical output of this paper consists in a proposal for the methodology and experimental setup to be used for the noise diagnostics of P-N junctions, focusing on these junctions\u2019 structural defects. The method is based on the experimental analysis of the narrow-band noise current r.m.s. value versus reverse current measured for bi-stable current conduction in micro-plasma regions. Each local peak of this curve corresponds to a single microplasma active region. The noise current r.m.s. value is decreasing growing temperature, which is in a good agreement with the microplasma related bi-stable current conduction." . "RIV/00216305:26220/06:PU62989" . . "56-59" . . "Koktav\u00FD, Pavel" . . "Vlastnosti GaAsP diod p\u0159i lok\u00E1ln\u00EDch lavinov\u00FDch pr\u016Frazech PN p\u0159echodu"@cs . "The present paper is intended to show the results of our theoretical as well as experimental studies of the phenomena that occur in consequence of micro-plasma discharges at localized points of PN junctions of reverse biased GaAs0,60P0,40 LEDs, which in turn manifest themselves as bi-stable or multi-stable noise. A practical output of this paper consists in a proposal for the methodology and experimental setup to be used for the noise diagnostics of P-N junctions, focusing on these junctions\u2019 structural defects. The method is based on the experimental analysis of the narrow-band noise current r.m.s. value versus reverse current measured for bi-stable current conduction in micro-plasma regions. Each local peak of this curve corresponds to a single microplasma active region. The noise current r.m.s. value is decreasing growing temperature, which is in a good agreement with the microplasma related bi-stable current conduction."@en . "On the Properties Of GaAsP Diodes Under PN Junction Local Avalanche Breakdown Conditions" . "Physical and Material Engineering 2006" . . "On the Properties Of GaAsP Diodes Under PN Junction Local Avalanche Breakdown Conditions"@en . . . "490493" . . . "[DC6F58DC73CD]" . . . "2006-09-05+02:00"^^ . "80-227-2467-X" . "On the Properties Of GaAsP Diodes Under PN Junction Local Avalanche Breakdown Conditions" . . . .