"6" . "26220" . "Tanuma, Nobuhisa" . "Z(MSM0021630503)" . "865-870" . "Hooge\u016Fv parametr epitaxn\u00EDho GaN na saf\u00EDru"@cs . . "Hooge\u016Fv parametr epitaxn\u00EDho GaN na saf\u00EDru"@cs . "Hashiguchi, Sumihisa" . "6"^^ . "GaN, 1/f noise, Hooge noise parameter, ohmic contact"@en . "Hooge noise parameter of epitaxial n-GaN on sapphire"@en . "RIV/00216305:26220/05:PU52165" . "2"^^ . . "Pavelka, Jan" . . "Hooge noise parameter of epitaxial n-GaN on sapphire"@en . . "[83F664ECBF07]" . . . "6"^^ . "\u0160ikula, Josef" . "Experiment\u00E1ln\u011B jsme ur\u010Dili mobilitu a koncentraci nosi\u010D\u016F n\u00E1boje v epitaxn\u00EDm n-GaN jako funkci teploty v rozmez\u00ED 300 a\u017E 15K. Nam\u011B\u0159en\u00E9 hodnoty jsou v dobr\u00E9m souladu s v\u00FDsledky numerick\u00E9 anal\u00FDzy, za p\u0159edpokladu ur\u010Dit\u00E9 m\u00EDry kompenzace. Po vytvo\u0159en\u00ED ohmick\u00FDchkontakt\u016F za optim\u00E1ln\u00ED teploty a d\u00E9lky oh\u0159evu jsme nam\u011B\u0159ili typick\u00E9 charakteristiky \u0161umu 1/f."@cs . . . . "Matsui, Toshiaki" . . . "The mobility and carrier concentration of the epitaxial n-GaN are obtained experimentally as a function of the temperature between 300 and 15K, and are found to be in a good agreement with those derived from numerical analyses assuming a certain amount of the compensation ratio. The typical 1/f noise characteristics are also obtained by forming an ideal Ohmic contact to the devices at the optimum alloying temperature and its period." . . . "RIV/00216305:26220/05:PU52165!RIV06-MSM-26220___" . . "523718" . "0038-1101" . . . "Hooge noise parameter of epitaxial n-GaN on sapphire" . "CZ - \u010Cesk\u00E1 republika" . . "The mobility and carrier concentration of the epitaxial n-GaN are obtained experimentally as a function of the temperature between 300 and 15K, and are found to be in a good agreement with those derived from numerical analyses assuming a certain amount of the compensation ratio. The typical 1/f noise characteristics are also obtained by forming an ideal Ohmic contact to the devices at the optimum alloying temperature and its period."@en . "Hooge noise parameter of epitaxial n-GaN on sapphire" . "Tacano, Munecazu" . "Solid State Electronics" . "49" .