"Tacano, Munecazu" . "Yagi, Shuichi" . "Noise characteristics of epitaxial n-GaN on sapphire layers and GaN/AlGaN on sapphire or SiC HFET structures were investigated in the temperature range of 13K to 300K. Ohmic contacts were made using Ti/Al/Ni/Au and contact noise was found negligible by TLM analysis. The Hooge parameter alfaH of epitaxial GaN was 2x10-3 at 300K, gradually decreasing to 10-4 around 50K. The GaN/AlGaN on SiC HFETs were characterised by alfaH values of 10-4 to 10-5."@en . "4"^^ . "GaN, 1/f noise, HFET"@en . . . "0-7354-0267-1" . . "RIV/00216305:26220/05:PU52162" . "Noise characteristics of epitaxial n-GaN on sapphire layers and GaN/AlGaN on sapphire or SiC HFET structures were investigated in the temperature range of 13K to 300K. Ohmic contacts were made using Ti/Al/Ni/Au and contact noise was found negligible by TLM analysis. The Hooge parameter alfaH of epitaxial GaN was 2x10-3 at 300K, gradually decreasing to 10-4 around 50K. The GaN/AlGaN on SiC HFETs were characterised by alfaH values of 10-4 to 10-5." . "Salamanka, \u0160pan\u011Blsko" . "8"^^ . "\u0160ikula, Josef" . "[9AE390BAFFD5]" . . "523719" . . . . "Hooge\u016Fv parametr \u0161umu GaN HFET\u016F na SiC"@cs . "2"^^ . "26220" . "Z(MSM0021630503)" . "Tanuma, Nobuhisa" . "2005-09-19+02:00"^^ . . "Hashiguchi, Sumihisa" . "Pavelka, Jan" . . . "343-346" . . "Hooge Noise Parameter of GaN HFETs on SiC"@en . "Hooge Noise Parameter of GaN HFETs on SiC"@en . "Okumura, Hajime" . "Hooge Noise Parameter of GaN HFETs on SiC" . "Salamanca, Spain" . "RIV/00216305:26220/05:PU52162!RIV06-MSM-26220___" . . "University of Salamanca" . "Hooge\u016Fv parametr \u0161umu GaN HFET\u016F na SiC"@cs . "Uemura, T." . "Hooge Noise Parameter of GaN HFETs on SiC" . "Noise and Fluctuations, 18th International Conference on Noise and Fluctuations - ICNF 2005, AIP Conference Proceedings 780" . . . "Zm\u011B\u0159ili jsme \u0161umov\u00E9 charakteristiky epitaxn\u00EDch vrstev GaN na saf\u00EDrov\u00E9 podlo\u017Ece a GaN/AlGaN HFET struktur na saf\u00EDru nebo SiC v teplotn\u00EDm rozsahu 13K a\u017E 300K. Ohmick\u00E9 kontakty byly vyrobeny pomoc\u00ED Ti/Al/Ni/Au a kontaktn\u00ED \u0161um shled\u00E1n zanedbateln\u00FDm pomoc\u00ED TLM anal\u00FDzy. Hooge\u016Fv parametr epitaxn\u00EDho GaN byl 2x10-3 p\u0159i 300K a postupn\u011B klesal na 10-4 v okol\u00ED 50K. HFETy GaN/AlGaN na SiC m\u011Bly alfaH hodnoty v rozmez\u00ED 10-4 a\u017E 10-5."@cs . . . .