"Tom\u00E1nek, Pavel" . "thin-film electroluminescent device, phosphors, charged center, transport properties, near-field investigations"@en . "Vliv n\u00E1boj\u016F na transportn\u00ED vlastnosti tenkovrstv\u00FDch EL sou\u010D\u00E1stek"@cs . "Z(MSM0021630503)" . "[8FAAC82417A6]" . . . . . "26220" . "Praha" . "2"^^ . . . . . . . "Ahmed, Mustafa M. Abdalla" . "RIV/00216305:26220/05:PU50418" . "80-86742-08-3" . "Influence of charged centers on transport properties of thin film electroluminescent devices" . "2"^^ . "Vliv n\u00E1boj\u016F na transportn\u00ED vlastnosti tenkovrstv\u00FDch EL sou\u010D\u00E1stek"@cs . "524645" . "Photonics Prague 2005" . . "Ahmed, Mustafa M. Abdalla" . . "Thin film electroluminescent devices (TFELD) have become of great interest since they offer a possible means of achieving a high-resolution, light-weight, compact video display panel for computer terminals or television screens [1].The realization of a full colour TFELD represented a problem due to the poor luminance of blue emission. To overcome this problem, the mechanism of electroluminescence (EL) should be investigated in detail to find out the way to improve the device properties. The basic mechannism of electroluminescence is based on high-field acceleration of electrons to optical energies at which luminescent centers, intentionally introduced into the host material, could be impact excited. So, the transport process of electrons under an electric field is the key process since it determines the electrons energy. This process is the result of interaction between the acceleration of electrons by the electric field and the scattering of electrons by some kinds of scattering mechanism, including"@en . "Prague" . "2"^^ . "Tenkovrstv\u00E9 EL sou\u010D\u00E1stky(TFELD) nab\u00EDzej\u00ED vysok\u00E9 rozli\u0161en\u00ED a kompaktnost obrazovek pro po\u010D\u00EDta\u010De \u010Di TV. Realizace plnohodnotn\u00FDch barevn\u00FDch TFELD p\u0159edstavuje probl\u00E9m, zp\u016Fsoben\u00FD nedostate\u010Dnou sv\u00EDtivost\u00ED modr\u00E9ho z\u00E1\u0159en\u00ED. K p\u0159ekon\u00E1n\u00ED tohoto probl\u00E9mu je nutn\u00E9 studovat mechanismu elektroluminiscence detailn\u011Bji. Z\u00E1kladn\u00ED mechanismus EL je zalo\u017Een urychlen\u00ED elektron\u016F pomoc\u00ED vysok\u00E9ho pole tak, aby se dostaly do oblasti optick\u00FDch energi\u00ED, p\u0159i nich\u017E je mo\u017En\u00E9 excitovat jednotliv\u00E1 zrnka fluoroforu. Tedy transport elekttron\u016F v elektrick\u00E9m poli je kl\u00ED\u010Dov\u00FDm procesem proto\u017Ee ur\u010Duje energii elektron\u016F. Tento proces je v\u00FDsledkem interakce urychlen\u00ED elektorn\u016F elektrick\u00FDm polem a rozptylem elektron\u016F. Nabit\u00E1 centra obecn\u011B v EL vrstv\u011B existuj\u00ED. V tomto \u010Dl\u00E1nku je zkoum\u00E1n procesrozptylu elektron\u016F na t\u011Bchto centech, kter\u00FD se projevuje v posunu f\u00E1ze. Rozptyly, z\u00EDskan\u00E9 v jednotliv\u00FDch p\u0159\u00EDpadech jsou porovn\u00E1nv\u00E1ny s ostatn\u00EDmi mechanismy rozptylu. Proces transportu elektron\u016F je simulov\u00E1n pomoc\u00ED Monte Carlo metody. Jsou uk\u00E1z\u00E1ny kvanti"@cs . . . "Influence of charged centers on transport properties of thin film electroluminescent devices" . "145-146" . . "2005-06-08+02:00"^^ . "Influence of charged centers on transport properties of thin film electroluminescent devices"@en . "Influence of charged centers on transport properties of thin film electroluminescent devices"@en . . . . "Zeithamlov\u00E1 Milena, Ing. - Agentura Action M" . "RIV/00216305:26220/05:PU50418!RIV06-MSM-26220___" . "Thin film electroluminescent devices (TFELD) have become of great interest since they offer a possible means of achieving a high-resolution, light-weight, compact video display panel for computer terminals or television screens [1].The realization of a full colour TFELD represented a problem due to the poor luminance of blue emission. To overcome this problem, the mechanism of electroluminescence (EL) should be investigated in detail to find out the way to improve the device properties. The basic mechannism of electroluminescence is based on high-field acceleration of electrons to optical energies at which luminescent centers, intentionally introduced into the host material, could be impact excited. So, the transport process of electrons under an electric field is the key process since it determines the electrons energy. This process is the result of interaction between the acceleration of electrons by the electric field and the scattering of electrons by some kinds of scattering mechanism, including" .