"Brno" . . "M\u011B\u0159en\u00ED fotoindukovan\u00E9ho n\u00E1boje a luminiscence v ZnS:Mn2+ ACTFEL"@cs . . "Brno" . "Electroluminescence, thin-film, photo-induced charge, photo-induced luminance, ACTFEL, ZnS:Mn"@en . "80-7355-024-5" . "Ahmed, Mustafa M. Abdalla" . "M\u011B\u0159en\u00ED fotoindukovan\u00E9ho n\u00E1boje a luminiscence v ZnS:Mn2+ ACTFEL"@cs . . . . . "1"^^ . "[AFF886507480]" . . . "4"^^ . "Photo-induced transferred charge (PIQ) and photo-induced luminescence (PIL) measurements involve the creation of electron-hole pairs in the phosphor near one of the phosphor/insulator interfaces, transport of this photo-induced charge across the phosphor, and measurement of the charge transferred across the phosphor layer or the luminescence emitted from the phosphor layer, respectively, as a function of the magnitude of the applied DC voltage. In PIQ/PIL experiments the electron and hole transport may be studied independently by simply changing the polarity of the DC bias. In ZnS:Mn alternating-current thin-film electroluminescence (ACTFEL) devices the hole transport may give rise to impact excitation-induced electroluminescence (EL), holes are approximately half as efficient as electrons in contributing to the transferred charge, and that the efficiency of transport is significantly greater for holes than electrons." . . "Photo-induced charge and luminescence measurements in ZnS:Mn2+ ACTFEL" . "1"^^ . . . "RIV/00216305:26220/04:PU44982!RIV/2005/MSM/262205/N" . "Photo-induced charge and luminescence measurements in ZnS:Mn2+ ACTFEL" . "26220" . "New trends in Physics NTF 2004" . "M\u011B\u0159en\u00ED fotoindukovan\u00E9ho n\u00E1boje (PIQ) a fotoindukovan\u00E9 luminescence (PIL) vy\u017Eaduj\u00ED tvorbu p\u00E1r\u016F elektron-d\u00EDra v luminoforu v bl\u00EDzkosti rozhran\u00ED luminofor/izol\u00E1tor, transport tohoto fotoindukovan\u00E9ho n\u00E1boje luminoforem a m\u011B\u0159en\u00ED n\u00E1boje p\u0159enesen\u00E9ho luminoforem nebo luminiscence vyz\u00E1\u0159en\u00E9 z vrstvy luminoforu jako funkci velikosti aplikovan\u00E9ho ss nap\u011Bt\u00ED. V PIQ/PIL experimentech mohou b\u00FDt elektrony a d\u00EDry studovan\u00E9 nez\u00E1visle pouhou zm\u011Bnou polarity p\u0159edp\u011Bt\u00ED. V ZnS:Mn ACTFEL m\u016F\u017Ee transport d\u011Br zp\u016Fsobit vznik elecctroluminiscence, p\u0159i\u010Dem\u017E d\u00EDry maj\u00ED p\u0159ibli\u017En\u011B polovi\u010Dn\u00ED \u00FA\u010Dinnost jako elektrony na p\u0159enos n\u00E1boje. \u00DA\u010Dinnost p\u0159enosu je podstatn\u011B v\u011Bt\u0161\u00ED pro d\u00EDry ne\u017E pro elektrony."@cs . . . . "Photo-induced charge and luminescence measurements in ZnS:Mn2+ ACTFEL"@en . "Photo-induced transferred charge (PIQ) and photo-induced luminescence (PIL) measurements involve the creation of electron-hole pairs in the phosphor near one of the phosphor/insulator interfaces, transport of this photo-induced charge across the phosphor, and measurement of the charge transferred across the phosphor layer or the luminescence emitted from the phosphor layer, respectively, as a function of the magnitude of the applied DC voltage. In PIQ/PIL experiments the electron and hole transport may be studied independently by simply changing the polarity of the DC bias. In ZnS:Mn alternating-current thin-film electroluminescence (ACTFEL) devices the hole transport may give rise to impact excitation-induced electroluminescence (EL), holes are approximately half as efficient as electrons in contributing to the transferred charge, and that the efficiency of transport is significantly greater for holes than electrons."@en . . "200-203" . . "RIV/00216305:26220/04:PU44982" . . "Ing. Zden\u011Bk Novotn\u00FD CSc." . . . . "P(ME 544), Z(MSM 262200022)" . "Photo-induced charge and luminescence measurements in ZnS:Mn2+ ACTFEL"@en . "Ahmed, Mustafa M. Abdalla" . "2004-11-11+01:00"^^ . "579423" .