. "26220" . "131-137" . . "7"^^ . "Local photoluminescence measurements of semiconductor surface defects"@en . . "5477" . . . . . "Local photoluminescence measurements of semiconductor surface defects"@en . "0277-786X" . . "5"^^ . "RIV/00216305:26220/04:PU43759" . "RIV/00216305:26220/04:PU43759!RIV/2005/MSM/262205/N" . . "Proceedings of SPIE" . . "Br\u00FCstlov\u00E1, Jitka" . "Tom\u00E1nek, Pavel" . . . . . . "Uhdeov\u00E1, Nad\u011B\u017Eda" . "The relevance of scanning near-field scanning optical microscopy (SNOM) for optical characterization of semiconductors with quantum dots is presented. The SNOM technique and some of its properties appropriate to real-time in-situ measurements are evaluated. Several optical characterization methods - widely used in the far-field, including reflectance, reflectance-difference spectroscopy, and carrier lifetime, are estimated for their use with SNOM. Experimental data are included for some of these methoods. Numerous standard optical characterization methods can be coupled with SNOM to provide higher spatial resolution. The applicability of SNOM as a real-time in-situ probe shares some of the problems of other local probe methods, but offers enough newcapabilities to assure its application." . "5"^^ . . "Lok\u00E1ln\u00ED m\u011B\u0159en\u00ED fotoluminiscence defekt\u016F polovodi\u010Dov\u00E9ho povrchu"@cs . . . . . "\u010Cl\u00E1nek ukazuje, jak m\u016F\u017Ee b\u00FDt SNOM pou\u017Eit na charakterizov\u00E1n\u00ED polovodi\u010D\u016F s kvantov\u00FDmi j\u00E1mami. Nekter\u00E9 optick\u00E9 charakteriza\u010Dn\u00ED metody, kter\u00E9 jsou zna\u010Dn\u011B pou\u017E\u00EDv\u00E1ny ve vzd\u00E1len\u00E9m poli, jako jsou odrazivost, spektroskopie diferen\u010Dn\u00ED odrazivosti, \u017Eivotnost nosi\u010D\u016F jsou zkoum\u00E1ny z hlediska bl\u00EDzk\u00E9ho pole pou\u017E\u00EDvaj\u00EDho SNOM. Pro n\u011Bkter\u00E9 t\u011Bchto technik jsou prezentov\u00E1na experiment\u00E1ln\u00ED data."@cs . . "The relevance of scanning near-field scanning optical microscopy (SNOM) for optical characterization of semiconductors with quantum dots is presented. The SNOM technique and some of its properties appropriate to real-time in-situ measurements are evaluated. Several optical characterization methods - widely used in the far-field, including reflectance, reflectance-difference spectroscopy, and carrier lifetime, are estimated for their use with SNOM. Experimental data are included for some of these methoods. Numerous standard optical characterization methods can be coupled with SNOM to provide higher spatial resolution. The applicability of SNOM as a real-time in-situ probe shares some of the problems of other local probe methods, but offers enough newcapabilities to assure its application."@en . "NEUVEDEN" . "US - Spojen\u00E9 st\u00E1ty americk\u00E9" . "P(ME 544), Z(MSM 262200022)" . "Dobis, Pavel" . "Local photoluminescence measurements of semiconductor surface defects" . "[D09849362EE2]" . "571697" . . . "Spectroscopy, near field optics, SNOM, local photoluminescence, semiconductor, surface, defects"@en . "Lok\u00E1ln\u00ED m\u011B\u0159en\u00ED fotoluminiscence defekt\u016F polovodi\u010Dov\u00E9ho povrchu"@cs . . . "Local photoluminescence measurements of semiconductor surface defects" . "Bene\u0161ov\u00E1, Mark\u00E9ta" .