"Rastrovac\u00ED optick\u00E1 mikroskopie v bl\u00EDyk\u00E9m poli a jej\u00ED aplikace v polvodi\u010Dov\u00E9m v\u00FDzkumu"@cs . "Rastrovac\u00ED optick\u00E1 mikroskopie v bl\u00EDyk\u00E9m poli a jej\u00ED aplikace v polvodi\u010Dov\u00E9m v\u00FDzkumu"@cs . . "Scanning near-field optical microscopy and its application in semiconductor investigation"@en . "Otev\u0159elov\u00E1, Dana" . . "Scanning near-field optical microscopy and its application in semiconductor investigation" . . "scanning near-field optical microscopy, photoluminecsence, semiconductor, locally induced photocurrent"@en . "Nizhny Novgorod" . "Nizhny Novgorod" . "Tom\u00E1nek, Pavel" . . "4"^^ . "585518" . "Scanning near-field optical microscopy and its application in semiconductor investigation" . "108-111" . "Dobis, Pavel" . "[4DFD1D47E90D]" . "RIV/00216305:26220/04:PU42255" . "4"^^ . "Bene\u0161ov\u00E1, Mark\u00E9ta" . . . . . . "Scanning near-field optical microscopy and its application in semiconductor investigation"@en . . "RIV/00216305:26220/04:PU42255!RIV/2005/MSM/262205/N" . . . "4"^^ . "Institute for Physics of Microsctructures RAS" . "26220" . "Rastrovac\u00ED optick\u00E1 mikroskopie v bl\u00EDzk\u00E9m poli(SNOM) otev\u0159ela novou \u00E9ru optick\u00E9 mikroskopie royzli\u0161en\u00EDm 50-100 nm. Pomoc\u00ED tohoto mikroskopu je mo\u017En\u00E9 sou\u010Dasn\u011B topografii a lok\u00E1ln\u00ED optick\u00E9 a elektronov\u00E9 vlastnosti, \u010D\u00EDm\u017E se vylou\u010D\u00ED nutnost korela\u010Dn\u00ED anal\u00FDzyv\u00FDsledk\u016F. V \u010Dl\u00E1nku budou diskutov\u00E1ny n\u011Bkter\u00E9 z aplikac\u00ED SNOM ve spektroskopii, v\u010Detn\u011B p\u0159ednost\u00ED a nedostatk\u016F."@cs . "Scanning near-field optical microscopy (SNOM) opened a new era in optical microscopy, bringing the spatial resolution at the 50-100 nm level using visible or near infrared light. This resolution is well below the diffraction limit of light and allows to overcome the restrictions of classical (far-field) optical techniques. With the development of small-aperture optical fiber probes or apertureless probes, sub-wavelength resolutions were achieved. The single capability of SNOM to simultaneously measure surface topography and local optical and electronic properties, thereby eliminating the need to perform cross correlation analysis on results obtained using different techniques, is particularly useful in this area. Several applications to the characterization of semiconductor, where SNOM techniques make possible a direct access to nondestructive, non-contact spectroscopic investigation of the structures, will be discussed. The advantages and drawbacks of SNOM in each application will be highlighte"@en . . "P(ME 544), Z(MSM 262200022)" . "Scanning probe microscopy 2004" . "2004-05-02+02:00"^^ . . . . "Scanning near-field optical microscopy (SNOM) opened a new era in optical microscopy, bringing the spatial resolution at the 50-100 nm level using visible or near infrared light. This resolution is well below the diffraction limit of light and allows to overcome the restrictions of classical (far-field) optical techniques. With the development of small-aperture optical fiber probes or apertureless probes, sub-wavelength resolutions were achieved. The single capability of SNOM to simultaneously measure surface topography and local optical and electronic properties, thereby eliminating the need to perform cross correlation analysis on results obtained using different techniques, is particularly useful in this area. Several applications to the characterization of semiconductor, where SNOM techniques make possible a direct access to nondestructive, non-contact spectroscopic investigation of the structures, will be discussed. The advantages and drawbacks of SNOM in each application will be highlighte" . . . . . . .