"26220" . . "358-363" . "Hub\u00E1lek, Jarom\u00EDr" . . "micromachined gas sensor, screen-printing, nanopowder,tungsten trioxide."@en . . "RIV/00216305:26220/03:PU40387" . "6"^^ . . "Malysz, Karel" . "[04BBA1C49DCE]" . "The Printing House, Stoughton, USA" . . "2003-10-22+02:00"^^ . "0"^^ . . "0"^^ . "RIV/00216305:26220/03:PU40387!RIV/2004/MSM/262204/N" . "2"^^ . . . "By means of an adapted screen-printing technique, sensitive layers of nanopowder tungsten trioxide were deposited on silicon micromachined substrates. The thickness of the sensing layers was 5 um and particle size was around 50 nm. Each chip contains four thin silicon nitride membranes, in the center of which a polysilicon heating resistor, insulating layers, platinum electrodes and sensitive layer are stacked. Unlike in previously reported works, the technological procedure reported here allows for depositing the sensing layers before the membranes have been etched. This avoids damaging the membranes during film deposition, which leads to gas sensor microsystems with an excellent fabrication yield [1]. The deposition method overcomes disadvantages such as low porosity and low surface area, generally associated to chemical vapor deposition or sputtering methods, and keeps power consumption low (80 mW for a working temperature of 480oC). As an example, the sensor response to ammonia, NO2, ethanol,"@en . "0-7803-8134-3" . . "IEEE Sensors 2003,Second IEEE International Conference on Sensors" . . "Toronto" . "Toronto" . . . "626450" . "Screen-printed nano-grain WO3 films for micro hotplate gas sensors" . . "10"^^ . . "Screen-printed nano-grain WO3 films for micro hotplate gas sensors" . . . "Screen-printed nano-grain WO3 films for micro hotplate gas sensors"@en . . "Z(MSM 262200022)" . . "Screen-printed nano-grain WO3 films for micro hotplate gas sensors"@en . "By means of an adapted screen-printing technique, sensitive layers of nanopowder tungsten trioxide were deposited on silicon micromachined substrates. The thickness of the sensing layers was 5 um and particle size was around 50 nm. Each chip contains four thin silicon nitride membranes, in the center of which a polysilicon heating resistor, insulating layers, platinum electrodes and sensitive layer are stacked. Unlike in previously reported works, the technological procedure reported here allows for depositing the sensing layers before the membranes have been etched. This avoids damaging the membranes during film deposition, which leads to gas sensor microsystems with an excellent fabrication yield [1]. The deposition method overcomes disadvantages such as low porosity and low surface area, generally associated to chemical vapor deposition or sputtering methods, and keeps power consumption low (80 mW for a working temperature of 480oC). As an example, the sensor response to ammonia, NO2, ethanol," .