"1"^^ . "Study of Microplasma Noise Statistical Characteristics for GaAsP Diodes"@en . . "2003-08-18+02:00"^^ . "26220" . . "Study of Microplasma Noise Statistical Characteristics for GaAsP Diodes" . . "4"^^ . . "RIV/00216305:26220/03:PU39256" . "CNRL, s.r.o." . . . . "80-239-1055-1" . "V p\u0159edlo\u017Een\u00E9m \u010Dl\u00E1nku jsou pops\u00E1ny charakteristiky n\u00E1hodn\u00E9ho impulzn\u00EDho procesu, kter\u00FD vznik\u00E1 v d\u016Fsledku bistabiln\u00ED podstaty veden\u00ED proudu mikroplazmami v PN p\u0159echodech luminiscen\u010Dn\u00EDch diod. Experimenty ukazuj\u00ED, \u017Ee bistabiln\u00ED chov\u00E1n\u00ED mikroplazmy je mo\u017En\u00E9 popsat jako dvoustavov\u00FD proces generace - rekombinace."@cs . "Characteristics of an impulse random process which arises in consequence of the bi-stable nature of the microplasma conductivity in GaAsP light emitting diode p-n junctions are dealt with in the present paper. Experiments show that the microplasma bi-stable behaviour may be described as a two-state stochastic process of a generation-recombination type (G-R process), which is Markovian, provided that the diode is operated in low-impedance load conditions. Theoretical solution of the model has been carrieed out, from which statistical characteristics of the process have subsequently been derived. Based on the theoretical analysis results, a methodology to be applied to the above-mentioned characteristic evaluation has been worked out. Experimental study of these characteristics has followed. The theoretical analysis shows that the process characteristics depend on the g and r parameters. The quantities g and r are the respective generation and recombination coefficients (turn-on probability p01 and turn"@en . . "Proceedings of the 17th International Conference Noise and Fluctuation ICNF 2003" . "Koktav\u00FD, Pavel" . "Study of Microplasma Noise Statistical Characteristics for GaAsP Diodes"@en . "Studium statistick\u00FDch charakteristik \u0161umu mikroplazmy v GaAsP diod\u00E1ch"@cs . "P(GA102/03/0621), Z(MSM 262200022)" . . "Study of Microplasma Noise Statistical Characteristics for GaAsP Diodes" . . . . . "Microplasma noise, Generation-recombination process, PN junction, Avalanche"@en . . . . "437-440" . . "Characteristics of an impulse random process which arises in consequence of the bi-stable nature of the microplasma conductivity in GaAsP light emitting diode p-n junctions are dealt with in the present paper. Experiments show that the microplasma bi-stable behaviour may be described as a two-state stochastic process of a generation-recombination type (G-R process), which is Markovian, provided that the diode is operated in low-impedance load conditions. Theoretical solution of the model has been carrieed out, from which statistical characteristics of the process have subsequently been derived. Based on the theoretical analysis results, a methodology to be applied to the above-mentioned characteristic evaluation has been worked out. Experimental study of these characteristics has followed. The theoretical analysis shows that the process characteristics depend on the g and r parameters. The quantities g and r are the respective generation and recombination coefficients (turn-on probability p01 and turn" . . "1"^^ . "[FFBB3F501B9D]" . "Prague" . . "Prague" . "RIV/00216305:26220/03:PU39256!RIV06-GA0-26220___" . "629571" . "Studium statistick\u00FDch charakteristik \u0161umu mikroplazmy v GaAsP diod\u00E1ch"@cs .