"CNRL, s.r.o." . . . "Statistics of Impact Ionization Processes in GaAsP P-N Junctions"@en . "Koktav\u00FD, Pavel" . . . . "[3C20DF860CC3]" . "1"^^ . . . . "Statistick\u00E9 charakteristiky procesu n\u00E1razov\u00E9 ionizace v GaAsP PN p\u0159echodech"@cs . "2003-08-18+02:00"^^ . "Proceedings of the 17th International Conference %22Noise and Fluctuation%22 ICNF 2003" . . "P(GA102/03/0621), Z(MSM 262200022)" . "80-239-1055-1" . "441-444" . . . "RIV/00216305:26220/03:PU39254" . "26220" . "Statistick\u00E9 charakteristiky procesu n\u00E1razov\u00E9 ionizace v GaAsP PN p\u0159echodech"@cs . "Prague" . "Prague" . "RIV/00216305:26220/03:PU39254!RIV06-GA0-26220___" . "Statistics of Impact Ionization Processes in GaAsP P-N Junctions" . "In the present paper, a model which is based on Birth-and-Death type Markovian processes, is proposed as a tool for statistical description of strong-field impact ionization in GaAs0.6P0.4 diode p-n junctions. This process is termed one-dimensional stochastic generation - recombination (G-R) process. The model applies to materials in which the value of a, the impact ionization coefficient, may be considered having the same value for both conduction electrons and holes, whose strong-field drift velocity has the same value for both charge carrier types. As a random quantity to analyse, we take the total number of free charge carriers N(t) in the ionization region, which is fluctuating due to the impact ionization random process and due to the charge car rier random flow-out of the ionization region. We start from the continuity equation for statistical mean values of charge carrier concentrations, to draw up a differential equation for the statistical mean value of N(t), from which wee will derive the c"@en . . . . "Microplasma noise, Impulse noise, GaAsP, PN junction, Generation-recombination process"@en . . "4"^^ . "Statistics of Impact Ionization Processes in GaAsP P-N Junctions"@en . "628794" . . . "V tomto \u010Dl\u00E1nku je pod\u00E1n prost\u0159edek pro statistick\u00FD popis procesu n\u00E1razov\u00E9 ionizace v GaAs0.6P0.4 PN p\u0159echodech v siln\u00FDch elektrick\u00FDch pol\u00EDch pomoc\u00ED modelu zalo\u017Een\u00E9m na Markovsk\u00E9m procesu typu generace - rekombinace."@cs . "In the present paper, a model which is based on Birth-and-Death type Markovian processes, is proposed as a tool for statistical description of strong-field impact ionization in GaAs0.6P0.4 diode p-n junctions. This process is termed one-dimensional stochastic generation - recombination (G-R) process. The model applies to materials in which the value of a, the impact ionization coefficient, may be considered having the same value for both conduction electrons and holes, whose strong-field drift velocity has the same value for both charge carrier types. As a random quantity to analyse, we take the total number of free charge carriers N(t) in the ionization region, which is fluctuating due to the impact ionization random process and due to the charge car rier random flow-out of the ionization region. We start from the continuity equation for statistical mean values of charge carrier concentrations, to draw up a differential equation for the statistical mean value of N(t), from which wee will derive the c" . . . . "Statistics of Impact Ionization Processes in GaAsP P-N Junctions" . "1"^^ .