. . "P(ME 544), P(OC 523.40), Z(MSM 262200022)" . "Near-field optical imaging of carrier dynamics in silicon with superresolution"@en . "617418" . . "Nizhniy Novgorod" . . "3"^^ . "Nizhniy Novgorod, Russia" . . . . . . "0"^^ . . "near-field optics, optical imaging, superresolution, semiconductor, silicon, lifetime, carrier dynamics"@en . "0"^^ . "Institute for Physics of microstructures RAS" . . . "Dobis, Pavel" . "Near-field optical imaging of carrier dynamics in silicon with superresolution" . "RIV/00216305:26220/03:PU31773!RIV/2004/MSM/262204/N" . . "Otev\u0159elov\u00E1, Dana" . "Near-field optical imaging of carrier dynamics in silicon with superresolution"@en . "Near-field optical imaging of carrier dynamics in silicon with superresolution" . "[9076CB37676A]" . . "Grmela, Lubom\u00EDr" . . . . . "26220" . "Scanning Probe Microscopy - 2003" . "Tom\u00E1nek, Pavel" . "2003-03-02+01:00"^^ . "The lifetime of excess carriers created by illumination of a semiconductor with a visible light is modified by the presence of defects, which may occur under or in the surface. The system detects the excess carries with an infrared (IR) light. Due to the free carrier absorption as a dominant carrier interaction for used IR wavelength, the IR signal is decreased by the presence of excess carriers. The time-dependence of the IR signal variation is characteristic of the excess carrier lifetime. Characterisstic rate variations of carrier processes in silicon are imaged using near field scanning optical microscopy (NSOM) with high (<100 nm) spatial resolution. Moreover, the images can locate defects, reveal variations, and map the regions in which a recombination process is active." . . "63-65" . "Bene\u0161ov\u00E1, Mark\u00E9ta" . . . . "6"^^ . . . . "The lifetime of excess carriers created by illumination of a semiconductor with a visible light is modified by the presence of defects, which may occur under or in the surface. The system detects the excess carries with an infrared (IR) light. Due to the free carrier absorption as a dominant carrier interaction for used IR wavelength, the IR signal is decreased by the presence of excess carriers. The time-dependence of the IR signal variation is characteristic of the excess carrier lifetime. Characterisstic rate variations of carrier processes in silicon are imaged using near field scanning optical microscopy (NSOM) with high (<100 nm) spatial resolution. Moreover, the images can locate defects, reveal variations, and map the regions in which a recombination process is active."@en . . "RIV/00216305:26220/03:PU31773" . . "5"^^ .