"7"^^ . "Pavelka, Jan" . "Electron mobility, charge carrier concentration, resistivity and Hooge noise parameter of epitaxial n-GaN layer was analysed in terms of several scattering mechanisms and Handel quantum theory of noise. Numerical model in temperature range 20-300K was compared with experimental results of noise and Hall measurements and we found good agreement."@en . . . . . . "644777" . "RIV/00216305:26220/02:PU52212" . . "4"^^ . "Electron mobility, charge carrier concentration, resistivity and Hooge noise parameter of epitaxial n-GaN layer was analysed in terms of several scattering mechanisms and Handel quantum theory of noise. Numerical model in temperature range 20-300K was compared with experimental results of noise and Hall measurements and we found good agreement."@cs . "Meisei University, Tokyo, Japan" . "132-135" . . "1"^^ . "Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN - Numerical Analyses by Quantum Transport" . "26220" . "[28A067E49979]" . . . "Tanuma, Nobuhisa" . "Yamada, M." . "Tacano, Munecazu" . . "Tokio" . "Elektronov\u00E1 pohyblivost, koncentrace nosi\u010D\u016F n\u00E1boje a \u0161umov\u00FD parametr n-GaN - numerick\u00E1 anal\u00FDza kvantov\u00E9ho transportu"@cs . "RIV/00216305:26220/02:PU52212!RIV06-MSM-26220___" . . "2002-11-16+01:00"^^ . "Tanoue, H." . . "Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN - Numerical Analyses by Quantum Transport" . "Tanizaki, H." . "Elektronov\u00E1 pohyblivost, koncentrace nosi\u010D\u016F n\u00E1boje a \u0161umov\u00FD parametr n-GaN - numerick\u00E1 anal\u00FDza kvantov\u00E9ho transportu"@cs . . "Electron mobility, charge carrier concentration, resistivity and Hooge noise parameter of epitaxial n-GaN layer was analysed in terms of several scattering mechanisms and Handel quantum theory of noise. Numerical model in temperature range 20-300K was compared with experimental results of noise and Hall measurements and we found good agreement." . "Z(MSM 262200022)" . . "GaN, scattering, mobility"@en . . . "Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN - Numerical Analyses by Quantum Transport"@en . "Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN - Numerical Analyses by Quantum Transport"@en . "Proceedings of the 13th Symposium on Advanced Materials" . "Tomisawa, K." . "Meisei Univeristy" .