. "RIV/00216305:26220/02:PU30677" . . . "662336" . . "65-70" . "Fluctuation and Noise Letters" . . . "Reverse Biased P-N Junction Noise in GaAsP Diodes with Avalanche Breakdown Induced Microplasmas" . "Koktav\u00FD, Pavel" . . . "Reverse Biased P-N Junction Noise in GaAsP Diodes with Avalanche Breakdown Induced Microplasmas" . "SG - Singapursk\u00E1 republika" . "2" . "0"^^ . . "Reverse Biased P-N Junction Noise in GaAsP Diodes with Avalanche Breakdown Induced Microplasmas"@en . "2"^^ . "0"^^ . "2" . "Random two-level or multiple-level current impulses may occur in electronic devices containing reverse biased p-n junctions in a certain operating mode. These impulses are usually rectangular, featuring constant amplitude, random pulse width and pulse origin time points. This phenomenon is generally ascribed to local avalanche breakdowns originating in p-n junction defect regions called microplasma regions. Based on experiment results, a two-state model of stochastic generation-recombination process hass been elaborated for the two-level impulse noise allowing to derive some statistical characteristics of this process. It can be shown that the distribution of the probability density w(t0) of the impulse separation t0 and the probability density w(t1) of the impulse width t1 have exponential courses. The power spectral density of the noise current is of a G-R process type and depends on the particular microplasma properties. From the viewpoint of noise diagnostics, the most important features are the s" . "[E9277CC0EF16]" . . "Random two-level or multiple-level current impulses may occur in electronic devices containing reverse biased p-n junctions in a certain operating mode. These impulses are usually rectangular, featuring constant amplitude, random pulse width and pulse origin time points. This phenomenon is generally ascribed to local avalanche breakdowns originating in p-n junction defect regions called microplasma regions. Based on experiment results, a two-state model of stochastic generation-recombination process hass been elaborated for the two-level impulse noise allowing to derive some statistical characteristics of this process. It can be shown that the distribution of the probability density w(t0) of the impulse separation t0 and the probability density w(t1) of the impulse width t1 have exponential courses. The power spectral density of the noise current is of a G-R process type and depends on the particular microplasma properties. From the viewpoint of noise diagnostics, the most important features are the s"@en . . "2"^^ . "RIV/00216305:26220/02:PU30677!RIV/2003/MSM/262203/N" . "Z(MSM 262200022)" . . . . "Microplasma noise, Local avalanche breakdown, LED diodes, Reliability"@en . "6"^^ . "0219-4775" . . . . "26220" . "\u0160ikula, Josef" . "Reverse Biased P-N Junction Noise in GaAsP Diodes with Avalanche Breakdown Induced Microplasmas"@en .