. . . "Uhdeov\u00E1, Nad\u011B\u017Eda" . . . . "Dobis, Pavel" . "651986" . . "RIV/00216305:26220/02:PU29105!RIV/2003/MSM/262203/N" . . . "RIV/00216305:26220/02:PU29105" . . "locally induced photocurrent, scanning near-field optical microscopy, super-resolution, AlGaAs/GaAs, Fabry-Perot effect"@en . "Tom\u00E1nek, Pavel" . "Local measurement of optically induced photocurrent in semiconductor structures"@en . . "Local measurement of optically induced photocurrent in semiconductor structures"@en . . . . . . "Photocurrent (PC) spectroscopic techniques have demonstrated to be helpful experimental method to investigate the local properties of bulk semiconductors, microstructures, surfaces and interfaces. We have measured locally induced PC of semiconductor quantum structures using a technique of reflection Scanning Near-field Optical Microscope (r-SNOM) in combination with Ti:Sapphire laser and tuning dye laser and with He-Ne laser. The r-SNOM employs an uncoated and/or Au-metalized single-mode fiber tip both in illumination and collection mode. Taking opportunity of the high lateral resolution of the microscope and combining it with fast micro-PL, it is possible to locate e.g. defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of measured quantities are also discussed." . "5"^^ . "0277-786X" . "Local measurement of optically induced photocurrent in semiconductor structures" . . . "Photocurrent (PC) spectroscopic techniques have demonstrated to be helpful experimental method to investigate the local properties of bulk semiconductors, microstructures, surfaces and interfaces. We have measured locally induced PC of semiconductor quantum structures using a technique of reflection Scanning Near-field Optical Microscope (r-SNOM) in combination with Ti:Sapphire laser and tuning dye laser and with He-Ne laser. The r-SNOM employs an uncoated and/or Au-metalized single-mode fiber tip both in illumination and collection mode. Taking opportunity of the high lateral resolution of the microscope and combining it with fast micro-PL, it is possible to locate e.g. defects in a multiple quantum well grown by molecular beam epitaxy. Near-field characteristics of measured quantities are also discussed."@en . "4"^^ . "Dobisov\u00E1, Mark\u00E9ta" . "0"^^ . "0"^^ . "4096" . "[10A93AFF3E14]" . "Proceedings of SPIE" . . "630-634" . "26220" . "4096" . "4"^^ . . "P(LA 031), P(OC 523.40), Z(MSM 262200022)" . . "US - Spojen\u00E9 st\u00E1ty americk\u00E9" . "Local measurement of optically induced photocurrent in semiconductor structures" . . .