"0"^^ . "0"^^ . . "6A" . "\u0160ikula, Josef" . "1"^^ . . . "Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements"@en . "[A2D98CEB7A84]" . "Yokokura, Saburo" . . . "3979-3984" . . "The Si surface of the wide band semiconductor n-SiC is plasma etched in order to smooth the substrates. Low frequency current noise characteristics are investigated in wide temperature range. Current noise increases with sample current and the number of electrons in active region is estimated from resistance and Hooge parameter."@en . "RIV/00216305:26220/01:PU24338" . . "Tanuma, Nobuhisa" . . "679133" . "P(ME 285)" . "Yasukawa, Satoshi" . "The Si surface of the wide band semiconductor n-SiC is plasma etched in order to smooth the substrates. Low frequency current noise characteristics are investigated in wide temperature range. Current noise increases with sample current and the number of electrons in active region is estimated from resistance and Hooge parameter." . "6"^^ . "Matsui, Toshiaki" . . "CZ - \u010Cesk\u00E1 republika" . "Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements" . "40" . "Hashiguchi, Sumihisa" . . "26220" . "Noise, SiC, Ni/n-SiC Contact"@en . "Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements"@en . "Electron Cyclotron Resonance Plasma Etching of n-SiC and Evaluation of Ni/n-SiC Contacts by Current Noise Measurements" . "0021-4922" . . . . "7"^^ . "Tacano, Munecazu" . . . "RIV/00216305:26220/01:PU24338!RIV/2002/MSM/262202/N" . "Journal of Applied Physics" .