"RIV/00216305:26220/01:PU23959!RIV/2002/MSM/262202/N" . . . "World Scientific" . . "0"^^ . "Yokokura, Saburo" . "0"^^ . . . . "981-02-4677-3" . "Ohmic contacts were prepared on the Si surface of the wide band gap semiconductor n-SiC etched by Ar ECR plasma and low-frequency current-noise characteristics of ohmic contacts were investigated." . . "Evaluation of Ni/n-SiC ohmic contacts by current noise measurements"@en . "Proceedings of the 16th Int Conf Noise in Physical Systems and 1/f Fluctuations ICNF 2001" . "contacts, noise, n-SiC"@en . . "Evaluation of Ni/n-SiC ohmic contacts by current noise measurements"@en . . "Matsui, Toshiaki" . "Evaluation of Ni/n-SiC ohmic contacts by current noise measurements" . "RIV/00216305:26220/01:PU23959" . "[0364C9B8C92F]" . . "Gainesville, USA" . "Evaluation of Ni/n-SiC ohmic contacts by current noise measurements" . "Tanuma, Nobuhisa" . . . "Ohmic contacts were prepared on the Si surface of the wide band gap semiconductor n-SiC etched by Ar ECR plasma and low-frequency current-noise characteristics of ohmic contacts were investigated."@en . "P(ME 285)" . . "679726" . "6"^^ . "Tacano, Munecazu" . "Hashiguchi, Sumihisa" . "119-122" . "26220" . "4"^^ . . "2001-10-22+02:00"^^ . . . "1"^^ . "\u0160ikula, Josef" . "Gainesville Florida USA" .