. . "Koktav\u00FD, Pavel" . "4"^^ . . "981-02-4677-3" . "Proceedings of ICNF 2001" . . "2"^^ . "26220" . "Random two-level or multiple-level current impulses may occur in electronic devices containing re-verse biased p-n junctions in a certain operating mode. These impulses are usually rectangular, fea-turing constant amplitude, random pulse width and pulse origin time points. This phenomenon is generally ascribed to local avalanche breakdowns originating in p-n junction defect regions called microplasma regions. Based on experiment results, a two-state model of stochastic generation-recombination process hhas been elaborated for the two-level impulse noise allowing to derive some statistical characteristics of this process. It can be shown that the distribution of the probability den-sity w(0) of the impulse separation 0 and the probability density w(1) of the impulse width 1 have exponential courses. The power spectral density of the noise current is of a G-R process type and de-pends on the particular microplasma properties. From the viewpoint of noise diagnostics, the m" . "2001-10-22+02:00"^^ . "0"^^ . . "2"^^ . "\u0160ikula, Josef" . . . "Random two-level or multiple-level current impulses may occur in electronic devices containing re-verse biased p-n junctions in a certain operating mode. These impulses are usually rectangular, fea-turing constant amplitude, random pulse width and pulse origin time points. This phenomenon is generally ascribed to local avalanche breakdowns originating in p-n junction defect regions called microplasma regions. Based on experiment results, a two-state model of stochastic generation-recombination process hhas been elaborated for the two-level impulse noise allowing to derive some statistical characteristics of this process. It can be shown that the distribution of the probability den-sity w(0) of the impulse separation 0 and the probability density w(1) of the impulse width 1 have exponential courses. The power spectral density of the noise current is of a G-R process type and de-pends on the particular microplasma properties. From the viewpoint of noise diagnostics, the m"@en . "0"^^ . "193-196" . . "Microplasma noise, Local avalanche breakdown, LED diodes, Reliability"@en . . . . . . "RIV/00216305:26220/01:PU23912!RIV/2002/GA0/262202/N" . "[DCCB96386765]" . . "691319" . . . . "RIV/00216305:26220/01:PU23912" . "Gainesville Florida USA" . "PN Junction Local Avalanche Breakdown Induced Microplasma Noise In Semiconductor GaAsP Diodes" . . . "Gainesville, Florida, USA" . "PN Junction Local Avalanche Breakdown Induced Microplasma Noise In Semiconductor GaAsP Diodes" . "P(GA102/99/1088), P(GA103/01/1058)" . "University of Florida, Gainesville, Florida, USA" . "PN Junction Local Avalanche Breakdown Induced Microplasma Noise In Semiconductor GaAsP Diodes"@en . "PN Junction Local Avalanche Breakdown Induced Microplasma Noise In Semiconductor GaAsP Diodes"@en .