. "Mach, Jind\u0159ich" . . . "8" . "Voborn\u00FD, Stanislav" . "RIV/00216305:26210/11:PU95617" . . "185532" . "The paper describes the design and construction of an ion-atomic beam source with an optimized generation of ions for ion-beam-assisted deposition under ultrahigh vacuum (UHV) conditions. The source combines an effusion cell and an electron impact ion source and produces ion beams with ultra-low energies in the range from 30 eV to 200 eV. Decreasing ion beam energy to hyperthermal values (101 eV) without loosing optimum ionization conditions has been mainly achieved by the incorporation of an ionization chamber with a grid transparent enough for electron and ion beams. In this way the energy and current density of nitrogen ion beams in the order of 101 eV and 101 nA/cm2, respectively, have been achieved. The source is capable of growing ultrathin layers or nanostructures at ultra-low energies with a growth rate of several MLs/h. The ion-atomic beam source will be preferentially applied for the synthesis of GaN under UHV conditions." . "RIV/00216305:26210/11:PU95617!RIV13-AV0-26210___" . . . . "ion-atomic source, IBAD, GaN"@en . . . "\u0160ikola, Tom\u00E1\u0161" . "7"^^ . "Dittrichov\u00E1, Libu\u0161e" . . . "The paper describes the design and construction of an ion-atomic beam source with an optimized generation of ions for ion-beam-assisted deposition under ultrahigh vacuum (UHV) conditions. The source combines an effusion cell and an electron impact ion source and produces ion beams with ultra-low energies in the range from 30 eV to 200 eV. Decreasing ion beam energy to hyperthermal values (101 eV) without loosing optimum ionization conditions has been mainly achieved by the incorporation of an ionization chamber with a grid transparent enough for electron and ion beams. In this way the energy and current density of nitrogen ion beams in the order of 101 eV and 101 nA/cm2, respectively, have been achieved. The source is capable of growing ultrathin layers or nanostructures at ultra-low energies with a growth rate of several MLs/h. The ion-atomic beam source will be preferentially applied for the synthesis of GaN under UHV conditions."@en . "[5E371BE72A24]" . . "Review of Scientific Instruments" . . . . "An ultra-low energy (30\u2013200 eV) ion-atomic beam source for ion-beam-assisted deposition in ultrahigh vacuum" . "26210" . . "An ultra-low energy (30\u2013200 eV) ion-atomic beam source for ion-beam-assisted deposition in ultrahigh vacuum"@en . "An ultra-low energy (30\u2013200 eV) ion-atomic beam source for ion-beam-assisted deposition in ultrahigh vacuum"@en . . . "Spousta, Ji\u0159\u00ED" . . . "8"^^ . . "8"^^ . . . "Zl\u00E1mal, Jakub" . . "US - Spojen\u00E9 st\u00E1ty americk\u00E9" . . . . . "\u0160amo\u0159il, Tom\u00E1\u0161" . "0034-6748" . "P(ED1.1.00/02.0068), P(FR-TI2/736), P(KAN400100701), P(LC06040), S, Z(MSM0021630508)" . "An ultra-low energy (30\u2013200 eV) ion-atomic beam source for ion-beam-assisted deposition in ultrahigh vacuum" . "Kol\u00EDbal, Miroslav" . "82" . .