. . . "10" . . . . . . "602" . "0039-6028" . . . "26210" . "5"^^ . . . . . . "\u0160ikola, Tom\u00E1\u0161" . "5"^^ . "RIV/00216305:26210/08:PU74401" . "Kol\u00EDbal, Miroslav" . "Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface" . . "Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface" . . "RIV/00216305:26210/08:PU74401!RIV10-MSM-26210___" . . . . "Gallium, Ga, Silicon, Si(100), Hydrogen, Surface structure, Nanoclusters, Low energy electron diffraction (LEED), Synchrotron radiation photoelectron spectroscopy (SR-PES), Photoemission"@en . . "5"^^ . "[8F00B0F2E264]" . "Mach, Jind\u0159ich" . "Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface"@en . "NL - Nizozemsko" . "Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface"@en . "Poto\u010Dek, Michal" . . "The influence of atomic hydrogen on the Si(100) substrate with submonolayer gallium surface phases - (2x3), (2x2) and (8x1) - as well as the deposition of gallium on monohydride terminated Si(100)-(2x1)-H surface were studied by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) and compared with similar metal/Si systems. It was found that gallium deposition on the Si(100)-(2x1)-H surface at elevated temperature (400 C) leads to a complete hydrogen desorption and formation of the same gallium surface phases as on the bare Si(100)-(2x1). Exposing the Si(100) substrate with (2x3)-Ga and (2x2)-Ga surface phases to atomic hydrogen results in the formation of gallium nanoclusters, surrounded by the Si(100)-(2x1)-H surface. These clusters have more than 2 monolayers in height and cover approximately 20 - 26 % of surface, depending on the initial coverage. The results indicate that the cluster size and density may be controlled by initial Ga coverage and poss" . . . . . "\u010Cechal, Jan" . . . "P(GEFON/06/E001), P(IAA1010413), P(KAN400100701), P(LC06040), Z(MSM0021630508)" . "Surface Science" . . . "357257" . "The influence of atomic hydrogen on the Si(100) substrate with submonolayer gallium surface phases - (2x3), (2x2) and (8x1) - as well as the deposition of gallium on monohydride terminated Si(100)-(2x1)-H surface were studied by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) and compared with similar metal/Si systems. It was found that gallium deposition on the Si(100)-(2x1)-H surface at elevated temperature (400 C) leads to a complete hydrogen desorption and formation of the same gallium surface phases as on the bare Si(100)-(2x1). Exposing the Si(100) substrate with (2x3)-Ga and (2x2)-Ga surface phases to atomic hydrogen results in the formation of gallium nanoclusters, surrounded by the Si(100)-(2x1)-H surface. These clusters have more than 2 monolayers in height and cover approximately 20 - 26 % of surface, depending on the initial coverage. The results indicate that the cluster size and density may be controlled by initial Ga coverage and poss"@en . .