"Journal of Physics: Condensed Matter" . "Kol\u00EDbal, Miroslav" . . . "016011-16025" . "\u010Cechal, Jan" . . . . "Strukture gallia na povrchu Si(111)-(7 x 7): vliv teploty a pokryt\u00ED"@cs . "4"^^ . "RIV/00216305:26210/07:PU63797" . . . . . . "Strukture gallia na povrchu Si(111)-(7 x 7): vliv teploty a pokryt\u00ED"@cs . "4"^^ . . "Gallium, Ga, Silicon, Si(100), Water, Surface structure, Low energy electron diffraction (LEED), Synchrotron radiation photoelectron spectroscopy"@en . . . "Gallium structure on the Si(111)-(7 x 7) surface: influence of Ga coverage and temperature"@en . "15"^^ . "P(LC06040), Z(MSM0021630508)" . . . . . . . . "26210" . "\u0160ikola, Tom\u00E1\u0161" . . "1" . "The results of gallium deposition on the Si(111)-(7 x 7) surface at different substrate temperatures (-183, RT, 300, 490 and 530 C) as well as the influence of subsequent annealing of the prepared layers are presented. The gallium structure was monitored by low-energy electron diffraction (LEED) and synchrotron radiation photoelectron spectroscopy (SR-PES). A detailed analysis of photoelectron spectra was carried out and three different Ga 3d peak components recognized.the first one was related to the (R3xR3) R30 reconstruction, the second to gallium island bases, and the third one to metallic gallium deposited on these bases. Depending on substrate temperature either only the island bases were formed (over 490 C) or these bases were covered with extra gallium atoms in an additional layer (300 C). In the case of room (low) temperature deposition only a weak interaction of gallium with the (7x7) substrate and a non-ordered growth were found. If the gallium coverage exceeded a critical value the gallium"@en . "Gallium structure on the Si(111)-(7 x 7) surface: influence of Ga coverage and temperature" . . . "Strukture gallia na povrchu Si(111)-(7 x 7): vliv teploty a pokryt\u00ED"@cs . "422934" . . "19" . "Kosteln\u00EDk, Petr" . "The results of gallium deposition on the Si(111)-(7 x 7) surface at different substrate temperatures (-183, RT, 300, 490 and 530 C) as well as the influence of subsequent annealing of the prepared layers are presented. The gallium structure was monitored by low-energy electron diffraction (LEED) and synchrotron radiation photoelectron spectroscopy (SR-PES). A detailed analysis of photoelectron spectra was carried out and three different Ga 3d peak components recognized.the first one was related to the (R3xR3) R30 reconstruction, the second to gallium island bases, and the third one to metallic gallium deposited on these bases. Depending on substrate temperature either only the island bases were formed (over 490 C) or these bases were covered with extra gallium atoms in an additional layer (300 C). In the case of room (low) temperature deposition only a weak interaction of gallium with the (7x7) substrate and a non-ordered growth were found. If the gallium coverage exceeded a critical value the gallium" . "RIV/00216305:26210/07:PU63797!RIV07-MSM-26210___" . . "Gallium structure on the Si(111)-(7 x 7) surface: influence of Ga coverage and temperature"@en . "0953-8984" . "GB - Spojen\u00E9 kr\u00E1lovstv\u00ED Velk\u00E9 Brit\u00E1nie a Severn\u00EDho Irska" . "Gallium structure on the Si(111)-(7 x 7) surface: influence of Ga coverage and temperature" . "[66656A6DB0CC]" .