"Poto\u010Dek, Michal" . . "RIV/00216305:26210/05:PU54245" . "Spousta, Ji\u0159\u00ED" . . . "Kosteln\u00EDk, Petr" . . . "[86776B759815]" . "Anal\u00FDza ultratenk\u00FDch vrstev GaN p\u0159ipraven\u00FDch metodou p\u0159\u00EDm\u00E9 depozice inotov\u00FDm svazkem"@cs . . . "1" . "In the contribution, the in-situ analysis of GaN ultrathin films grown on Si (111) by a low-temperature technique combining a hyperthermal nitrogen ion beam and gallium atomic beam under UHV conditions will be presented. Low energy ions from the beam (10-100 eV) provides an extra kinetic energy on the surface, thus substituting a need for higher temperatures typical for other techniques (e.g. MOCVD). Additionally, this extra energy is responsible for a subsurface growth improving the layer adhesion. De eposition experiments were carried out at different operation parameters. The dependence on ion-impact energy, substrate temperature and ion-to-atom arrival ratio was examined. The ultrathin films were analyzed using XPS to find their composition, their structure- and morphology analyses were carried out by LEED and AFM, respectively. Compared to our previous experiments, the deposition setup was improved by modification of a gas distribution system and by application of nitrogen of higher purity (6-9)." . . "Vienna" . . . . "Analysis of GaN Ultrathin Films grown by Direct Ion Beam Deposition" . . . "B\u00E1bor, Petr" . . "8"^^ . . "Anal\u00FDza ultratenk\u00FDch vrstev GaN p\u0159ipraven\u00FDch metodou p\u0159\u00EDm\u00E9 depozice inotov\u00FDm svazkem"@cs . . "8"^^ . "Analysis of GaN Ultrathin Films grown by Direct Ion Beam Deposition"@en . "Voborn\u00FD, Stanislav" . "Analysis of GaN Ultrathin Films grown by Direct Ion Beam Deposition"@en . . "P\u0159\u00EDsp\u011Bvek se zab\u00FDv\u00E1 tvorbou a anal\u00FDzou ultratenk\u00FDch vrstev GaN p\u0159ipraven\u00FDch metodou p\u0159\u00EDm\u00E9 depozice."@cs . "\u010Cechal, Jan" . . "\u0160ikola, Tom\u00E1\u0161" . . . . . "In the contribution, the in-situ analysis of GaN ultrathin films grown on Si (111) by a low-temperature technique combining a hyperthermal nitrogen ion beam and gallium atomic beam under UHV conditions will be presented. Low energy ions from the beam (10-100 eV) provides an extra kinetic energy on the surface, thus substituting a need for higher temperatures typical for other techniques (e.g. MOCVD). Additionally, this extra energy is responsible for a subsurface growth improving the layer adhesion. De eposition experiments were carried out at different operation parameters. The dependence on ion-impact energy, substrate temperature and ion-to-atom arrival ratio was examined. The ultrathin films were analyzed using XPS to find their composition, their structure- and morphology analyses were carried out by LEED and AFM, respectively. Compared to our previous experiments, the deposition setup was improved by modification of a gas distribution system and by application of nitrogen of higher purity (6-9)."@en . "Mach, Jind\u0159ich" . "Analysis of GaN Ultrathin Films grown by Direct Ion Beam Deposition" . "26210" . "RIV/00216305:26210/05:PU54245!RIV06-MSM-26210___" . "Z(MSM0021630508)" . . "Gallium; GaN; direct deposition"@en . "512055" .