"Lo\u0161\u0165\u00E1k, Petr" . "Defects in Bi(2)Te(3-x)Se(x) single crystals" . "Single crystals of a ternary system based on Bi2Te3-xSex (nominally x = 0.0-0.2) were prepared using the Bridgman technique. Samples with varying content of Se were characterized by the measurement of lattice parameters, electrical conductivity sigma (perpendicular to c) and Hall coefficient RH(B parallel to c). The actual concentration of selenium c(Se) in the samples was determined using atomic emission spectroscopy. While a small selenium concentration enhances the free hole concentration P after passing a maximum, the hole concentration decreases at higher selenium concentrations. The extreme-like dependence P = f(c(Se)) is explained in terms of a change of the native defect concentration due to the substitution of selenium atoms by tellurium ones." . "4"^^ . "GB - Spojen\u00E9 kr\u00E1lovstv\u00ED Velk\u00E9 Brit\u00E1nie a Severn\u00EDho Irska" . . "Defects in Bi(2)Te(3-x)Se(x) single crystals"@en . . . "RIV/00216275:25310/10:39881705" . . "structural defects; electrical conductivity; Hall coefficient; crystals of tetradymite structure"@en . "165" . . "Bene\u0161, Ludv\u00EDk" . "[88FD7E5538EA]" . "Defects in Bi(2)Te(3-x)Se(x) single crystals" . "253099" . "Bachan, David" . . . . "5"^^ . "Defects in Bi(2)Te(3-x)Se(x) single crystals"@en . "Krej\u010Dov\u00E1, Anna" . . "000275126400003" . . . . "Single crystals of a ternary system based on Bi2Te3-xSex (nominally x = 0.0-0.2) were prepared using the Bridgman technique. Samples with varying content of Se were characterized by the measurement of lattice parameters, electrical conductivity sigma (perpendicular to c) and Hall coefficient RH(B parallel to c). The actual concentration of selenium c(Se) in the samples was determined using atomic emission spectroscopy. While a small selenium concentration enhances the free hole concentration P after passing a maximum, the hole concentration decreases at higher selenium concentrations. The extreme-like dependence P = f(c(Se)) is explained in terms of a change of the native defect concentration due to the substitution of selenium atoms by tellurium ones."@en . . "3" . . "Dra\u0161ar, \u010Cestm\u00EDr" . "Z(MSM0021627501)" . "5"^^ . "Radiation Effects and Defects in Solids" . . "1042-0150" . . . "25310" . . "RIV/00216275:25310/10:39881705!RIV11-MSM-25310___" . .