"Journal of Non-Crystalline Solids" . . "Multilayer planar structures prepared from chalcogenide thin films of As-Se and Ge-Se systems and polymer thin films using thermal evaporation and spin-coating techniques"@en . "NL - Nizozemsko" . . "Krbal, Milo\u0161" . . "\u010Cl\u00E1nek popisuje p\u0159\u00EDpravu multivrstev syst\u00E9mu chalkogenid (As-Se, Ge-Se)/polymer (PAI) a studium jejich optick\u00FDch vlastnost\u00ED v bl\u00EDzk\u00E9 infra\u010Derven\u00E9 oblasti elektromagnetick\u00E9ho spektra."@cs . "Orava, Ji\u0159\u00ED" . . "[ED0A434A928B]" . . "381128" . "We report the preparation of multilayers based on polyamide-imide polymer and As-Se or Ge-Se chalcogenide thin films. Chalcogenide films of As-Se and Ge-Se systems were deposited using a thermal evaporation method periodically alternating with spin-coated Polyamide-imide films. Fifteen layers of PAI + As-Se system and nineteen layers of PAI + Ge-Se system were coated. Optical properties of prepared multilayers have been established using UV/vis/NIR and Ellipsometric spectroscopy. Both, PAI + As-Se and PAI + Ge-Se multilayer systems, exhibited the high-reflection bands centered around 830 nm and 1350 nm, respectively. The shift of the band position of PAI + Ge-Se multilayers to lower energies was caused by higher thickness of Ge-Se films. The bandwidth of reflection band of 8 PAI + 7 As-Se multilayer was 90 nm while bandwidth of PAI + Ge-Se system decreased to 70 nm because Ge-Se films have 0.1 lower refractive index against As-Se films. Design of 1D-photonic crystals based on alternating chalcogenide"@en . . . . "Multilayer planar structures prepared from chalcogenide thin films of As-Se and Ge-Se systems and polymer thin films using thermal evaporation and spin-coating techniques"@en . "W\u00E1gner, Tom\u00E1\u0161" . "photonic bandgap; ellipsometry; spin-coating; infrared properties"@en . . "Plan\u00E1rn\u00ED multivrstvy p\u0159\u00EDpraven\u00E9 z chalkogenidov\u00FDch tenk\u00FDch vrstev syst\u00E9m\u016F As-Se a Ge-Se a polymern\u00EDch vrstev PAI pomoc\u00ED termick\u00E9ho napa\u0159ov\u00E1n\u00ED a rota\u010Dn\u00EDho lit\u00ED"@cs . . . "Multilayer planar structures prepared from chalcogenide thin films of As-Se and Ge-Se systems and polymer thin films using thermal evaporation and spin-coating techniques" . . . "4"^^ . "354" . . . . "Ilavsky, Juraj" . "P(GP203/08/P204), P(LC523), Z(MSM0021627501)" . "Plan\u00E1rn\u00ED multivrstvy p\u0159\u00EDpraven\u00E9 z chalkogenidov\u00FDch tenk\u00FDch vrstev syst\u00E9m\u016F As-Se a Ge-Se a polymern\u00EDch vrstev PAI pomoc\u00ED termick\u00E9ho napa\u0159ov\u00E1n\u00ED a rota\u010Dn\u00EDho lit\u00ED"@cs . "Kohoutek, Tom\u00E1\u0161" . "7"^^ . "2-9" . "4"^^ . . "We report the preparation of multilayers based on polyamide-imide polymer and As-Se or Ge-Se chalcogenide thin films. Chalcogenide films of As-Se and Ge-Se systems were deposited using a thermal evaporation method periodically alternating with spin-coated Polyamide-imide films. Fifteen layers of PAI + As-Se system and nineteen layers of PAI + Ge-Se system were coated. Optical properties of prepared multilayers have been established using UV/vis/NIR and Ellipsometric spectroscopy. Both, PAI + As-Se and PAI + Ge-Se multilayer systems, exhibited the high-reflection bands centered around 830 nm and 1350 nm, respectively. The shift of the band position of PAI + Ge-Se multilayers to lower energies was caused by higher thickness of Ge-Se films. The bandwidth of reflection band of 8 PAI + 7 As-Se multilayer was 90 nm while bandwidth of PAI + Ge-Se system decreased to 70 nm because Ge-Se films have 0.1 lower refractive index against As-Se films. Design of 1D-photonic crystals based on alternating chalcogenide" . "25310" . . "RIV/00216275:25310/08:00007549!RIV09-GA0-25310___" . . "RIV/00216275:25310/08:00007549" . . "Frumar, Miloslav" . "Multilayer planar structures prepared from chalcogenide thin films of As-Se and Ge-Se systems and polymer thin films using thermal evaporation and spin-coating techniques" . . "Vl\u010Dek, Milan" . . "0022-3093" .