. "amorphous chalcogenides; thin films; pulsed laser deposition; sputtering"@en . "Adam, J.-I." . "3"^^ . . "RIV/00216275:25310/06:00004193!RIV08-MSM-25310___" . . . . . . "8"^^ . . "Fabrication and characterization of amorphous Ga-Ge-Sb-S thin films."@en . . "Jedelsk\u00FD, Jaroslav" . "Fabrication and characterization of amorphous Ga-Ge-Sb-S thin films."@en . "5956" . "[814C74AEF918]" . "Cardinal, T." . "N\u011Bmec, Petr" . . "P\u0159\u00EDprava a charakterizace amorfn\u00EDch tenk\u00FDch vrstev Ga-Ge-Sb-S."@cs . . "Proc. SPIE Int. Soc. Opt. Eng." . "475450" . . . . "Frumar, Miloslav" . "Fabrication and characterization of amorphous Ga-Ge-Sb-S thin films." . "Bousquet, C." . "The aim of the present investigation was to optimize deposition conditions for the preparation of pure and Tm3+ or Er3+ doped sulphide films by pulsed laser deposition and rf magnetron sputtering system. The study of their compositional, morphological and structural characteristics was realized by MEB-EDS, atomic force, RBS, X-ray diffraction and Raman spectroscopy analyses. Some optical properties (transmittance, index of refraction, optical band gap, etc.) of prepared chalcogenide films and the propagation modes measured at 633 nm, 1304 nm and 1540 nm by means of the m-lines prism-coupling configuration were investigated. The whole results point out hopeful perspectives strengthened by the clear observation of the photo-luminescence of erbium and thulium within doped sulphide films." . "Duverger, C." . . . . "P(GA203/05/0524), P(LC523), Z(MSM0021627501)" . "Vinatier, P." . "RIV/00216275:25310/06:00004193" . . "The aim of the present investigation was to optimize deposition conditions for the preparation of pure and Tm3+ or Er3+ doped sulphide films by pulsed laser deposition and rf magnetron sputtering system. The study of their compositional, morphological and structural characteristics was realized by MEB-EDS, atomic force, RBS, X-ray diffraction and Raman spectroscopy analyses. Some optical properties (transmittance, index of refraction, optical band gap, etc.) of prepared chalcogenide films and the propagation modes measured at 633 nm, 1304 nm and 1540 nm by means of the m-lines prism-coupling configuration were investigated. The whole results point out hopeful perspectives strengthened by the clear observation of the photo-luminescence of erbium and thulium within doped sulphide films."@en . "US - Spojen\u00E9 st\u00E1ty americk\u00E9" . . "11"^^ . "Nazabal, Virginie" . . "P\u0159\u00EDprava a charakterizace amorfn\u00EDch tenk\u00FDch vrstev Ga-Ge-Sb-S."@cs . "Jacquier, B." . "Fabrication and characterization of amorphous Ga-Ge-Sb-S thin films." . . "1-8" . "25310" . "0277-786X" . "-" . "C\u00EDlem v\u00FDzkumu byla optimalizace depozi\u010Dn\u00EDch podm\u00EDnek pro p\u0159\u00EDpravu \u010Dist\u00FDch a Tm3+ nebo Er3+ dotovan\u00FDch sulfidov\u00FDch tenk\u00FDch vrstev metodami pulzn\u00ED laserov\u00E9 depozice a rf magnetronov\u00FDm napra\u0161ov\u00E1n\u00EDm. Byla provedena studie kompozi\u010Dn\u00EDch, morfologick\u00FDch a strukturn\u00EDch charakteristik pou\u017Eit\u00EDm metod MEB-EDS, AFM, RBS, rentgenov\u00E1 difrakce a Ramanova spektroskopie. Byly studov\u00E1ny n\u011Bkter\u00E9 optick\u00E9 vlastnosti p\u0159ipraven\u00FDch chalkogenidov\u00FDch film\u016F (propustnost, index lomu, optick\u00E1 \u0161\u00ED\u0159ka zak\u00E1zan\u00E9ho p\u00E1su energi\u00ED, atd.) a propaga\u010Dn\u00ED m\u00F3dy p\u0159i vlnov\u00FDch d\u00E9lk\u00E1ch 633, 1304 a 1540 nm technikou %22m-lines prism-coupling%22. V\u00FDsledky ukazuj\u00ED slibn\u00E9 perspektivy studovan\u00FDch materi\u00E1l\u016F umocn\u011Bn\u00E9 pozorov\u00E1n\u00EDm fotoluminiscence erbia a thulia v dotovan\u00FDch sulfidov\u00FDch vrstv\u00E1ch."@cs . "Jurdyc, Am." .