. "RIV/00216224:14740/14:00079942" . "layered structures; GaN; AlGaN; silicon"@en . . "Caha, Ond\u0159ej" . . "Wang, Chennan" . . . "ONSEMI" . . "[9CB2F8BAA38A]" . . . "*Utilization of characterization methods for development of *Al/GaN epitaxial technology. Evaluating the feasibility of MOCVD epitaxial growth of HEMT materials including structure characteristics and characterization methods. Perform characterization of optical properties of *Al/GaN layered system and propose metrology for layer thickness estimation. Perform correlation of measurement with FTIR system. Develop x-ray methods for characterization of defects in epitaxial *Al/GaN layers. Develop x-ray methods for fast analysis of composition of epitaxial *Al/GaN layers." . "67"^^ . . "14740" . . "N" . "Metrology of epitaxial layers *GaN" . "RIV/00216224:14740/14:00079942!RIV15-MSM-14740___" . . . "Metrology of epitaxial layers *GaN" . "4"^^ . "29025" . "Metrology of epitaxial layers *GaN"@en . "Wang, Chennan" . . . . "Metrology of epitaxial layers *GaN"@en . "4"^^ . . "Huml\u00ED\u010Dek, Josef" . "Masarykova univerzita, Brno" . "Report LDDA 2014" . "*Utilization of characterization methods for development of *Al/GaN epitaxial technology. Evaluating the feasibility of MOCVD epitaxial growth of HEMT materials including structure characteristics and characterization methods. Perform characterization of optical properties of *Al/GaN layered system and propose metrology for layer thickness estimation. Perform correlation of measurement with FTIR system. Develop x-ray methods for characterization of defects in epitaxial *Al/GaN layers. Develop x-ray methods for fast analysis of composition of epitaxial *Al/GaN layers."@en . "M\u00FCnz, Filip" . .