. "X-RAY-DIFFRACTION; SINGLE DIRAC CONE; SURFACE-STATES; BI2TE3 FILMS; THIN-FILMS; PHASES; SYSTEM; BITE; SI"@en . "[BF70F91E527B]" . . . . "Structure and composition of bismuth telluride topological insulators grown by molecular beam epitaxy"@en . . "The structure and composition of Bi2Te3-delta topological insulator layers grown by molecular beam epitaxy is studied as a function of beam flux composition. It is demonstrated that, depending on the Te/Bi2Te3 flux ratio, different layer compositions are obtained corresponding to a Te deficit delta varying between 0 and 1. On the basis of X-ray diffraction analysis and a theoretical description using a random stacking model, it is shown that for delta >= 0 the structure of the epilayers is described well by a random stacking of Te-Bi-Te-Bi-Te quintuple layers and Bi-Bi bilayers sharing the same basic hexagonal lattice structure. The random stacking model accounts for the observed surface step structure of the layers and compares very well with the measured X-ray data, from which the lattice parameters a and c as a function of the chemical composition were deduced."@en . . "47895" . "http://journals.iucr.org/j/issues/2014/06/00/rg5074/rg5074.pdf" . . . . "Structure and composition of bismuth telluride topological insulators grown by molecular beam epitaxy" . "Springholz, G\u00FCnter" . . "December" . . "12"^^ . "6"^^ . "Structure and composition of bismuth telluride topological insulators grown by molecular beam epitaxy"@en . "14740" . . "Volobuev, Valentine" . "RIV/00216224:14740/14:00079372!RIV15-MSM-14740___" . "47" . . "0021-8898" . "Steiner, Hubert" . "US - Spojen\u00E9 st\u00E1ty americk\u00E9" . "10.1107/S1600576714020445" . "Hol\u00FD, V\u00E1clav" . "000345877900010" . "1"^^ . . . . "Bauer, Guenther" . . "I, P(GA14-08124S)" . . . "Journal of Applied Crystallography" . . . "Caha, Ond\u0159ej" . "Structure and composition of bismuth telluride topological insulators grown by molecular beam epitaxy" . . "RIV/00216224:14740/14:00079372" . "The structure and composition of Bi2Te3-delta topological insulator layers grown by molecular beam epitaxy is studied as a function of beam flux composition. It is demonstrated that, depending on the Te/Bi2Te3 flux ratio, different layer compositions are obtained corresponding to a Te deficit delta varying between 0 and 1. On the basis of X-ray diffraction analysis and a theoretical description using a random stacking model, it is shown that for delta >= 0 the structure of the epilayers is described well by a random stacking of Te-Bi-Te-Bi-Te quintuple layers and Bi-Bi bilayers sharing the same basic hexagonal lattice structure. The random stacking model accounts for the observed surface step structure of the layers and compares very well with the measured X-ray data, from which the lattice parameters a and c as a function of the chemical composition were deduced." .