"Aurora ELK low-k films, deposited using a PECVD porogen-based process, were treated with 35 s of He/H2 downstream-plasma (DSP) at varied temperatures of 25 C, 200 C, 300 C and 350 C. The plasma modifications were investigated using various physical-chemical methods. Results showed that extended He/H2 DSP plasma exposure at elevated temperature may lead to k-value reduction due to porosity increase without hydrophilisation of the modified layer. Improvement in dielectric constant is accompanied by a small reduction of mechanical strength. The porosity increase was related to removal of porogen residues formed during the ultra-violet (UV) curing. The porogen residue removal signature was reflected in the optical properties in the UV range and the C-depth profile of the investigated low-k material." . "Baklanov, Mikhail" . "De Gendt, Stefan" . . "371695" . . "Kaneko, Shinya" . . "Matsushita, Kiyohiro" . "Improved low-k dielectric properties using He/H2 plasma for resist removal"@en . . "14310" . . "Berry, Ivan" . "Escorcia, Orlando" . "Improved low-k dielectric properties using He/H2 plasma for resist removal" . "Shamiryan, Denis" . "Travaly, Youssef" . "Sprey, Hessel" . . "RIV/00216224:14310/08:00038410!RIV10-MSM-14310___" . "Urbanowicz, Adam" . . "Mar\u0161\u00EDk, P\u0159emysl" . "low-k; strip plasma; porogen residues"@en . . "[7C108553D7CD]" . "Tsui, N." . "Improved low-k dielectric properties using He/H2 plasma for resist removal"@en . . "Verdonck, Patrick" . "De Roest, David" . "Ferchichi, Abdelkarim" . . "Vanstreels, Kris" . "Improved low-k dielectric properties using He/H2 plasma for resist removal" . . "Aurora ELK low-k films, deposited using a PECVD porogen-based process, were treated with 35 s of He/H2 downstream-plasma (DSP) at varied temperatures of 25 C, 200 C, 300 C and 350 C. The plasma modifications were investigated using various physical-chemical methods. Results showed that extended He/H2 DSP plasma exposure at elevated temperature may lead to k-value reduction due to porosity increase without hydrophilisation of the modified layer. Improvement in dielectric constant is accompanied by a small reduction of mechanical strength. The porosity increase was related to removal of porogen residues formed during the ultra-violet (UV) curing. The porogen residue removal signature was reflected in the optical properties in the UV range and the C-depth profile of the investigated low-k material."@en . "Waldfried, Carlo" . "18"^^ . . "Luo, Shijian" . . . "Z(MSM0021622410)" . "RIV/00216224:14310/08:00038410" . . "1"^^ .