. "Vacuum" . . . "Atomic force microscopy analysis of morphology of the upper boundaries of GaN thin films prepared by MOCVD"@en . "RIV/00216224:14310/05:00015079!RIV10-MSM-14310___" . "1-3" . "80" . "Atomic force microscopy analysis of morphology of the upper boundaries of GaN thin films prepared by MOCVD" . "Roughness; AFM; GaN films"@en . . "Klapetek, Petr" . . "Bonnanni, Alberta" . . "5"^^ . "Montaigne Ramil, Alberto" . "Ohl\u00EDdal, Ivan" . "RIV/00216224:14310/05:00015079" . . . . . . "513288" . . "Atomic force microscopy analysis of morphology of the upper boundaries of GaN thin films prepared by MOCVD"@en . . "In this paper the results of the atomic force microscopy analysis of the upper boundaries of the GaN nucleation and buffer films prepared by MOCVD are presented. It is shown that the upper boundaries of nucleation films exhibit morphology identical with statistical roughness. The values of the basic statistical roughness quantities, i.e. the RMS values of the heights and the autocorrelation length values, of these boundaries are determined in dependences on time and temperature of their annealing. These RMS values decrease with increasing values of both technological parameters. It is also found that the corresponding power spectral density functions of the upper boundaries of these films satisfy the Gaussian function very well. Furthermore, it is shown that the GaN buffer films created onto the selected nucleation film have the upper boundaries whose morphology is different from the typical statistical surface roughness."@en . "14310" . "5"^^ . "Atomic force microscopy analysis of morphology of the upper boundaries of GaN thin films prepared by MOCVD" . "[FA9E5A0DD26B]" . "GB - Spojen\u00E9 kr\u00E1lovstv\u00ED Velk\u00E9 Brit\u00E1nie a Severn\u00EDho Irska" . . "2"^^ . . "Sitter, Helmut" . "0042-207X" . "Z(MSM 143100003)" . . "In this paper the results of the atomic force microscopy analysis of the upper boundaries of the GaN nucleation and buffer films prepared by MOCVD are presented. It is shown that the upper boundaries of nucleation films exhibit morphology identical with statistical roughness. The values of the basic statistical roughness quantities, i.e. the RMS values of the heights and the autocorrelation length values, of these boundaries are determined in dependences on time and temperature of their annealing. These RMS values decrease with increasing values of both technological parameters. It is also found that the corresponding power spectral density functions of the upper boundaries of these films satisfy the Gaussian function very well. Furthermore, it is shown that the GaN buffer films created onto the selected nucleation film have the upper boundaries whose morphology is different from the typical statistical surface roughness." .