. . "219" . . . "Studium \u017E\u00EDh\u00E1n\u00ED multivrstev SiGe/Si s vysok\u00FDm obsahem Ge"@cs . "Bensahel, Daniel" . "3"^^ . . . "RIV/00216224:14310/04:00010958!RIV08-MSM-14310___" . "Kermarrec, Olivier" . "Byla studov\u00E1na teplotn\u00ED stbilita multivrstev SiGe/Si (80% Ge) metodou rtg reflexe b\u011Bhem \u017E\u00EDh\u00E1n\u00ED in-situ p\u0159i teplot\u011B 810C."@cs . . "Z(MSM 143100002)" . . "Campidelli, Yves" . "Annealing studies of high Ge composition Si/SiGe multilayers"@en . . . "Nov\u00E1k, Ji\u0159\u00ED" . . "Reflectivity; X-ray diffraction; Annealing; Diffusion; Si/SiGe multiple quantum wells"@en . "Annealing studies of high Ge composition Si/SiGe multilayers" . "Hol\u00FD, V\u00E1clav" . "11"^^ . "6"^^ . "Bauer, G\u00FCnther" . "Temperature stability of SiGe/Si (80% Ge) multilayers was studied using x-ray reflectivity during in-situ annealing at temperature 810C." . "Tsujino, Soichiro" . "DE - Spolkov\u00E1 republika N\u011Bmecko" . "Falub, Claudiu" . "RIV/00216224:14310/04:00010958" . "195-200" . "Annealing studies of high Ge composition Si/SiGe multilayers"@en . "14310" . . . "Temperature stability of SiGe/Si (80% Ge) multilayers was studied using x-ray reflectivity during in-situ annealing at temperature 810C."@en . "554710" . "Annealing studies of high Ge composition Si/SiGe multilayers" . "Gr\u00FCtzmacher, Detlev" . "Zeitschrift fur Kristalographie" . . "Medu\u0148a, Mojm\u00EDr" . . "4" . . "M\u00FCller, Elisabeth" . "Studium \u017E\u00EDh\u00E1n\u00ED multivrstev SiGe/Si s vysok\u00FDm obsahem Ge"@cs . . . "0044-2968" . "[83CD66F7200F]" . .