. "Epitaxial thin oxide layers were grown by simultaneous aluminum deposition and oxidation on a Co(0001) single crystal, and the metal-oxide interface between the substrate and the grown layer was studied using photoelectron spectroscopy. The oxide layers were composed of two kinds of chemically different layers. Angle-resolved measurements were used to determine the compositions of oxide sub-layers and to reveal their respective thicknesses. The topmost oxide layers were up to 0.23 nm thick, determined by analysis of O 1s and Co 2p(3/2) photoelectron spectra. The results of the analysis show that the interface layer is composed of a mixture of oxygen and cobalt atoms and its thickness is approximately 0.6 nm. The analysis of Co 2p(3/2), Al 2p(3/2) and O 1s core level binding energies confirmed the presence of CoO in the interface layer and Al2O3 in the topmost oxide layer."@en . . "8"^^ . "RIV/00216208:11320/13:10192057!RIV14-MSM-11320___" . "Journal of Physics Condensed Matter" . . "000314823600013" . "2"^^ . "RIV/00216208:11320/13:10192057" . "Matol\u00EDn, Vladim\u00EDr" . "Depth profiling of ultra-thin alumina layers grown on Co(0001)" . "GB - Spojen\u00E9 kr\u00E1lovstv\u00ED Velk\u00E9 Brit\u00E1nie a Severn\u00EDho Irska" . "I, P(LD11047), P(LG12003)" . "Sk\u00E1la, Tom\u00E1\u0161" . . . "Nemsak, S." . "5"^^ . . "25" . "Depth profiling of ultra-thin alumina layers grown on Co(0001)"@en . . "[BE4B0AAEFE59]" . . . "Depth profiling of ultra-thin alumina layers grown on Co(0001)" . "Yoshitake, M." . . . . . . "11320" . "Prince, K. C." . "9" . . "Depth profiling of ultra-thin alumina layers grown on Co(0001)"@en . . . "10.1088/0953-8984/25/9/095004" . . . "68429" . "0953-8984" . "Epitaxial thin oxide layers were grown by simultaneous aluminum deposition and oxidation on a Co(0001) single crystal, and the metal-oxide interface between the substrate and the grown layer was studied using photoelectron spectroscopy. The oxide layers were composed of two kinds of chemically different layers. Angle-resolved measurements were used to determine the compositions of oxide sub-layers and to reveal their respective thicknesses. The topmost oxide layers were up to 0.23 nm thick, determined by analysis of O 1s and Co 2p(3/2) photoelectron spectra. The results of the analysis show that the interface layer is composed of a mixture of oxygen and cobalt atoms and its thickness is approximately 0.6 nm. The analysis of Co 2p(3/2), Al 2p(3/2) and O 1s core level binding energies confirmed the presence of CoO in the interface layer and Al2O3 in the topmost oxide layer." . . "film growth and epitaxy; Methods of deposition of films and coatings; Oxidation; Composition and phase identification"@en . "http://dx.doi.org/10.1088/0953-8984/25/9/095004" .