"Kopach, Oleg" . . . "196196" . . "IEEE Transactions on Nuclear Science" . "RIV/00216208:11320/11:10105613" . "Belas, Eduard" . "Verzhak, Yevheniya" . "000295778000005" . "Grill, Roman" . . . "Effect of Cd(0.9)Zn(0.1)Te:In Crystals Annealing on Their High-Temperature Electrical Properties" . . "10.1109/TNS.2011.2164580" . "RIV/00216208:11320/11:10105613!RIV12-MSM-11320___" . "US - Spojen\u00E9 st\u00E1ty americk\u00E9" . "2"^^ . . "Fochuk, Petro" . . . . . "Effect of Cd(0.9)Zn(0.1)Te:In Crystals Annealing on Their High-Temperature Electrical Properties"@en . . "Point defects; Electrical properties; Annealing; CdZnTe:In"@en . "Effect of Cd(0.9)Zn(0.1)Te:In Crystals Annealing on Their High-Temperature Electrical Properties"@en . . "10"^^ . "We studied the electrical properties of Cd(0.9)Zn(0.1)Te:In (CZT) single crystals with [In]=3*10(15) at/cm(3) at its high-temperature point-defect equilibrium state under a Cd overpressure. We detailed the influence of thermal treatment and the deviation of stoichiometry on the electron concentration, observing unexpectedly high conductivity and an increase in free-electron density (similar to 1.5-2 orders of magnitude) when annealing the sample at 770 K under a Cd vapor pressure (0.01 atm.). Prolonged exposure of the samples under these conditions lowered the electron density by two approximately orders-of-magnitude until it approached the intrinsic value. The electron mobility after such treatment increased to CZT maximal values at similar to 460 K (650-700 cm(2)/(V*s)). Therefore, such annealing can be effective in assuring high-resistive CZT detectors after crystal growth, or by special treatment, thereby eliminating the inclusions. We analyzed these data in the framework of Kroger theory of quasi-chemical reactions, and compared the findings to those obtained for undoped CdTe." . . "[3AE94924D2A0]" . "Panchuk, Oleg" . "http://ieeexplore.ieee.org/xpl/tocresult.jsp?asf_arn=null&asf_iid=0&asf_pun=23&asf_in=5&asf_rpp=null&asf_iv=58&asf_sp=2346&asf_pn=1" . "Nakonechnyi, Igor" . "5" . "11320" . "Effect of Cd(0.9)Zn(0.1)Te:In Crystals Annealing on Their High-Temperature Electrical Properties" . . "We studied the electrical properties of Cd(0.9)Zn(0.1)Te:In (CZT) single crystals with [In]=3*10(15) at/cm(3) at its high-temperature point-defect equilibrium state under a Cd overpressure. We detailed the influence of thermal treatment and the deviation of stoichiometry on the electron concentration, observing unexpectedly high conductivity and an increase in free-electron density (similar to 1.5-2 orders of magnitude) when annealing the sample at 770 K under a Cd vapor pressure (0.01 atm.). Prolonged exposure of the samples under these conditions lowered the electron density by two approximately orders-of-magnitude until it approached the intrinsic value. The electron mobility after such treatment increased to CZT maximal values at similar to 460 K (650-700 cm(2)/(V*s)). Therefore, such annealing can be effective in assuring high-resistive CZT detectors after crystal growth, or by special treatment, thereby eliminating the inclusions. We analyzed these data in the framework of Kroger theory of quasi-chemical reactions, and compared the findings to those obtained for undoped CdTe."@en . "James, Ralph B." . "Yang, Ge" . . "Bolotnikov, Aleksey E." . "0018-9499" . "58" . . . "Z(MSM0021620834)" . "6"^^ .