"Results on the properties of the known impurities, Ge, Sn, V and Bi, and the lattice imperfections, VCd and TeCd are summarized. We discuss their role in compensation, and in buffering the variations in shallow electronic levels in the grown ingot." . "Fiederle, Michael" . . "Characterization of compensation and trapping in CdTe and CdZnTe: Recent advances" . . "Characterization of compensation and trapping in CdTe and CdZnTe: Recent advances"@en . "11320" . . "Dieguez, Ernesto" . . . "10" . "306767" . "5"^^ . . . "RIV/00216208:11320/09:00207327!RIV10-MSM-11320___" . "RIV/00216208:11320/09:00207327" . "James, Ralph" . "Babentsov, Volodymyr" . . . "Franc, Jan" . "H\u00F6schl, Pavel" . "Crystal Research and Technology" . "000271514600006" . "Characterization of compensation and trapping in CdTe and CdZnTe: Recent advances"@en . "8"^^ . "[6B68F53DD79D]" . . "Characterization; compensation; trapping; CdZnTe; Recent; advances"@en . "DE - Spolkov\u00E1 republika N\u011Bmecko" . "Sochinskii, Nikolai" . "Z(MSM0021620834)" . . "Results on the properties of the known impurities, Ge, Sn, V and Bi, and the lattice imperfections, VCd and TeCd are summarized. We discuss their role in compensation, and in buffering the variations in shallow electronic levels in the grown ingot."@en . . . "44" . . "Benz, Klaus" . . . . . "0232-1300" . "2"^^ . . "Characterization of compensation and trapping in CdTe and CdZnTe: Recent advances" .