"Preparation of inclusion and precipitate free semi-insulating CdTe"@en . "RIV/00216208:11320/09:00206778!RIV10-GA0-11320___" . . . . . "0018-9499" . . "5"^^ . "Grill, Roman" . "56" . . "IEEE Transactions on Nuclear Science" . "Belas, Eduard" . . "Bug\u00E1r, Marek" . . "5"^^ . "4" . "335731" . "H\u00F6schl, Pavel" . "RIV/00216208:11320/09:00206778" . . "Preparation; inclusion; precipitate; semi-insulating; CdTe"@en . "[1DBC6B9FB055]" . "Preparation of inclusion and precipitate free semi-insulating CdTe"@en . "Franc, Jan" . . "Preparation of inclusion and precipitate free semi-insulating CdTe" . "5"^^ . . "US - Spojen\u00E9 st\u00E1ty americk\u00E9" . . "Preparation of inclusion and precipitate free semi-insulating CdTe" . . "Annealing conditions used for the preparation of semi-insulating CdTe after elimination of inclusions and precipitates are discussed. Second phase defects are eliminated by post-growth stoichiometric annealing and the semi-insulating CdTe is prepared by re-annealing under Te or Cd overpressure." . . . . "000269154800011" . . . "P(GA102/06/0258), Z(MSM0021620834)" . . "Annealing conditions used for the preparation of semi-insulating CdTe after elimination of inclusions and precipitates are discussed. Second phase defects are eliminated by post-growth stoichiometric annealing and the semi-insulating CdTe is prepared by re-annealing under Te or Cd overpressure."@en . . . . . "11320" .