" gamma ray" . . "The main goal of the project is to optimize senzor for X and gamma ray detection It will be experimentally searched optimization of signal to noise ratio."@en . " ray detection" . . "Cadmium-Telluride senzors" . . . . "2009-02-24+01:00"^^ . . " X -ray" . . . "Cadmium-Telluride senzors; X -ray; gamma ray; ray detection; signal to noise ratio"@en . "1"^^ . "2010-06-30+02:00"^^ . "0"^^ . "0"^^ . . "0"^^ . "2007-05-01+02:00"^^ . "Hlavn\u00EDm c\u00EDlem p\u0159edkl\u00E1dan\u00E9ho projektu je optimalizovat senzor pro detekci X a gama z\u00E1\u0159en\u00ED. V tomto projektu bude provedeno experiment\u00E1ln\u00ED vy\u0161et\u0159en\u00ED genera\u010Dn\u011B-rekombina\u010Dn\u00EDho a 1/f \u0161umu na vzorc\u00EDch kadmia-telluridu. Experimenty budou prov\u00E1d\u011Bny p\u0159i velmi n\u00EDzk\u00FDch frekvenc\u00EDch. V\u00FDzkum p\u0159isp\u011Bje k hlub\u0161\u00EDmu pozn\u00E1n\u00ED zdroje 1/f \u0161umu. Vytvo\u0159\u00ED z\u00E1klad pro z\u00EDsk\u00E1n\u00ED v\u011Bt\u0161\u00ED citlivosti t\u011Bchto detektor\u016F pro zlep\u0161en\u00ED technologie p\u0159i p\u0159\u00EDprav\u011B detektor\u016F na b\u00E1zi CdTe, kter\u00E9 je mo\u017Eno pou\u017E\u00EDvat jako prvky aktivn\u00ED bezpe\u010Dnosti." . "0"^^ . . "ME 898" . "Cadmium-Telluride senzors for X and gamma ray detection: optimization of signal to noise ratio"@en . "\u0160umov\u00E1 spektroskopie prok\u00E1zala u vzork\u016F CdTe jako dominantn\u00ED slo\u017Eku \u0161um typu 1/f.Anal\u00FDza v\u00FDsledk\u016F a n\u00E1sleduj\u00EDc\u00ED v\u00FDpo\u010Dty uk\u00E1zali,\u017Ee zv\u00FD\u0161en\u00E1 hodnota spektr\u00E1ln\u00ED hustoty \u0161umu je zp\u016Fsobena n\u00EDzkou koncentrac\u00ED nosi\u010D\u016F v depleti\u010Dn\u00ED vrstv\u011B z\u00E1v\u011Brn\u011B polarizovan\u00E9ho kontaktu kov-polovodi\u010D.Zv\u00FD\u0161en\u00E1 hodnota spektr\u00E1ln\u00ED v\u00FDkonov\u00E9 hustoty m\u016F\u017Ee b\u00FDt pova\u017Eov\u00E1na za jeden ze spolehlivostn\u00EDch indik\u00E1tor\u016F."@cs . "The dominant noise at low frequencies of all the samples is 1/f noise. The analysis of the measuring results and the following calculations confirmed that the excess value of low frequency noise is caused by the low carrier concentration within the depleted region of the reverse bias junction. Increase value of the spectral power density is considered as a reliability indicator."@en . . "Kadmium\u2013teluridov\u00E9 senzory pro detekci rentgenov\u00E9ho a gamma z\u00E1\u0159en\u00ED:optimalizace pom\u011Bru sign\u00E1l/\u0161um" . "2009-12-31+01:00"^^ . . . . "http://www.isvav.cz/projectDetail.do?rowId=ME 898"^^ . . . . . .