"17"^^ . "charge transfer" . "2012-03-01+01:00"^^ . . . "17"^^ . "charge transfer; semiconductor nanostructures; light conversion; quantum dots"@en . " light conversion" . . . . . "Quantum size effect in optoelectronic properties of nanostructures embedded in semiconductor layers."@en . "2015-02-16+01:00"^^ . . . " semiconductor nanostructures" . "1"^^ . "http://www.isvav.cz/projectDetail.do?rowId=LH12236"^^ . . "Kvantov\u00FD rozm\u011Brov\u00FD efekt v polovodi\u010Dov\u00FDch nanostruktur\u00E1ch pro optoelektroniku." . . . "LH12236" . "0"^^ . "Projekt je \u0159e\u0161en ve spolupr\u00E1ci s kolegy z \u00DAstavu fyziky polovodi\u010D\u016F, Sibi\u0159sk\u00E9 odd\u011Blen\u00ED Rusk\u00E9 akademie v\u011Bd, v Novosibirsku. Z technologick\u00E9ho hlediska se zam\u011B\u0159\u00EDme p\u0159edev\u0161\u00EDm na funkcionalizaci povrchu nano\u010D\u00E1stic a na metody optim\u00E1ln\u00EDho zabudov\u00E1n\u00ED nano\u010D\u00E1stic do tenk\u00FDch vrstev hydrogenovan\u00E9ho amorfn\u00EDho k\u0159em\u00EDku a PIN p\u0159echod\u016F. Z experiment\u00E1ln\u00EDho hlediska bude hlavn\u00ED d\u016Fraz kladen na studium defekt\u016F v zak\u00E1zanem p\u00E1su a-Si:H pomoc\u00ED m\u011B\u0159en\u00ED spekter optick\u00E9 absorpce a fotoproudu, studium sm\u011B\u0159en\u00ED \u00FA\u010Dinnosti photovoltaick\u00E9ho jevu a elektroluminiscence. Z teoretick\u00E9ho hlediska bude polo\u017Een d\u016Fraz na v\u00FDzkum takov\u00FDch jev\u016F, jak\u00FDmi je vliv p\u0159\u00EDtomnosti kvantov\u00FDch nanostruktur na hustotu stav\u016F v zak\u00E1zan\u00E9m p\u00E1su a-Si:H. D\u00E1le budeme porovn\u00E1vat v\u00FDsledky teoretick\u00E9ho modelov\u00E1n\u00ED p\u0159enosu n\u00E1boje funkcionalizovan\u00FDm povrchem nano\u010D\u00E1stic s nam\u011B\u0159en\u00FDmi optick\u00FDmi spektry. Z\u00EDskan\u00E9 v\u00FDsledky pomohou porozum\u011Bt proces\u016Fm konverze sv\u011Btla ve fotovoltaick\u00FDch sou\u010D\u00E1stk\u00E1ch a elektroluminiscen\u010Dn\u00EDch diod\u00E1ch vyroben\u00FDch na b\u00E1zi PIN tenkovrstv\u00E9ho k\u0159em\u00EDku" . . . "We want to explain the influence of the technological process of preparation of the samples on the transfer of electronic charge or of the electronic excitation energy between individual elements of the semiconductor nanostructures in the materials of the type of InAs, GaN or Si and Ge. In the theoretical work we want to explain the influence of the magnitude of the nanocrystalline particles and the influence of the processes of the electron scattering on phonons in the transfer of electronic charge and energy in the nanostructures. We expect that the obtained knowledge will help us to understand the processes of the conversion of the light in the photovoltaic devices and also to understand the origin of the dark current in the photodetectors of the infrared light based on the quantum dots. We also expect that the gained knowledge will help us to better understand the photoluminescence and electroluminescence of semiconductors with indirect gap , like Si and diamond."@en . . "0"^^ . . . . "2015-12-31+01:00"^^ . "2014-03-06+01:00"^^ . . .