"9"^^ . "9"^^ . "We prepared Schottky structures graphite/metal nanoparticles/semiconductor epitaxial layer with excellent parameters. Transport properties of the interface were described by the generation-recombination theory in the space charge region. We showed that these structures are capable of detecting very low concentrations of hydrogen."@en . . "2013-11-30+01:00"^^ . . "The project focuses on the deposition of metal nanoparticles onto surfaces of epitaxial layers of III-V semiconductors to prepare high-quality Schottky barriers and to investigate their potential application in the detection of hazardous gases. Advanced characterization techniques are employed to study the metal-semiconductor interface and to characterize the local interfacial structure."@en . "LD12014" . . . "0"^^ . . . . . "1"^^ . . . . . "\u00DAloha rozhran\u00ED p\u0159i p\u0159\u00EDprav\u011B Schottkyho bari\u00E9r vysok\u00E9 kvality na polovodi\u010D\u00EDch III-V" . . . . "2012-03-01+01:00"^^ . "http://www.isvav.cz/projectDetail.do?rowId=LD12014"^^ . "P\u0159ipravili jsme Schottkyho struktury grafit/kovov\u00E9 nano\u010D\u00E1stice/polovodi\u010Dov\u00E1 epitaxn\u00ED vrstva s\u00A0vynikajic\u00EDmi parametry. Transportn\u00ED vlastnosti rozhran\u00ED byly pops\u00E1ny genera\u010Dn\u011B rekombina\u010Dn\u00ED teori\u00ED v oblasti prostorov\u00E9ho n\u00E1boje. Uk\u00E1zali jsme, \u017Ee tyto struktury jsou pou\u017Eiteln\u00E9 p\u0159i detekci velmi n\u00EDzk\u00FDch koncentrac\u00ED vod\u00EDku."@cs . "0"^^ . "III-V semiconductors epitaxial layers metal nonoparticles metal-semiconductor interface Schottky barrier"@en . . "P\u0159\u00EDprava struktur kovov\u00E9 nano\u010D\u00E1stice-polovodi\u010D III-V na epitaxn\u00EDch vrstv\u00E1ch r\u016Fzn\u00E9ho slo\u017Een\u00ED p\u0159ipraven\u00FDch z kapaln\u00E9 a plynn\u00E9 f\u00E1ze. Charakterizace a modelov\u00E1n\u00ED tohoto rozhran\u00ED a studium optick\u00FDch vlastnost\u00ED. Mo\u017Enosti aplikace v senzorech vod\u00EDku." . "2014-06-30+02:00"^^ . . "Role of the interface in the preparation of high quality Schottky barriers on III-V semiconductors."@en . . "2013-02-25+01:00"^^ . . .