"0"^^ . . "IAA110433" . "0"^^ . "F\u00E1zov\u00E9 zm\u011Bny v tenk\u00FDch vrstv\u00E1ch a-Si:H vyvolan\u00E9 pulsn\u00EDm laserov\u00FDm UV z\u00E1\u0159en\u00EDm" . . . "1"^^ . . . . . . "Bude odvozen teoretick\u00FD model popisuj\u00EDc\u00ED t\u00E1n\u00ED a solidifikaci tenk\u00FDch vrstev a-Si:H. Tento model bude zahrnovat jak procesy solidifikace na f\u00E1zov\u00E9m rozhran\u00ED, tak procesy nukleace v z\u00E1vislosti na tepeln\u00E9 historii vzorku. Fenomenologick\u00FD model, zalo\u017Een\u00FD na bilanci tepla v syst\u00E9mu, bude ov\u011B\u0159en experimentem. Dynamika charakteristick\u00FDch parametr\u016F a f\u00E1zov\u00E9 transformace b\u011Bhem oza\u0159ov\u00E1n\u00ED pulsn\u00EDm laserem bude sledov\u00E1na m\u011B\u0159en\u00EDm TRR (time resolve reflectivity) v z\u00E1vislosti na slo\u017Een\u00ED a tlou\u0161\u0165ce vrstvy a na parametrech pulsu laseru. Struktura, optick\u00E9 parametry a vodivost v\u00FDsledn\u00E9 vrstvy budou analyzov\u00E1ny b\u011B\u017En\u00FDmi metodami. Porozum\u011Bn\u00ED dynamice f\u00E1zov\u00E9 transformace v a-Si:H tenk\u00FDch vrstv\u00E1ch n\u00E1m umo\u017En\u00ED p\u0159\u00EDpravu struktury (polykrystalick\u00E9, amorfn\u00ED nebo por\u00E9zn\u00ED) vhodn\u00E9 pro technickou aplikaci." . . . "Phase transitions in thin a-Si:H films induced by pulsed UV laser irradiation"@en . . . "27"^^ . . "http://www.isvav.cz/projectDetail.do?rowId=IAA110433"^^ . "27"^^ .