. "0"^^ . . . . . "Preparation of AIIIBV type II. semiconductor heterointerfaces and their characterisation"@en . . . . . . . "17"^^ . "http://www.isvav.cz/projectDetail.do?rowId=IAA1010807"^^ . "Vyu\u017Eit\u00ED vybran\u00FDch fyzik\u00E1ln\u00EDch charakteriza\u010Dn\u00EDch metodik (n\u00EDzkoteplotn\u00ED fotoluminiscence, rtg. difrakce, Ramanovy spektroskopie, rtg. mikrosondy, \u0159\u00E1dkovac\u00ED a tunelovac\u00ED elektronov\u00E9 mikroskopie a transportn\u00EDch m\u011B\u0159en\u00ED) pro studium a optimalizaci heterorozhran\u00ED mezi epitaxn\u00EDmi vrstvami, strukturami, mnohon\u00E1sobn\u00FDmi kvantov\u00FDmi jamami a superm\u0159\u00ED\u017Ekami polovodi\u010D\u016F typu AIIIBV, konkr\u00E9tn\u011B bin\u00E1rn\u00EDch, tern\u00E1rn\u00EDch a kvatern\u00E1rn\u00EDch syst\u00E9m\u016F na b\u00E1zi GaSb/InAs/GaAs/AlAs. Uveden\u00E9 struktury chceme p\u0159ipravovat na jedin\u00E9 LP-MOVPE aparatu\u0159e v \u010CR (AIXTRON 200). Hlavn\u00ED z\u00E1jem budeme v\u011Bnovat rekombinaci na heterorozhran\u00ED I. a hlavn\u011B II. typu s v\u00FDhledem na vyu\u017Eit\u00ED z\u00EDskan\u00FDch poznatk\u016F pro p\u0159\u00EDpravu zdroj\u016F koherentn\u00EDho z\u00E1\u0159en\u00ED v bl\u00EDzk\u00E9 a st\u0159edn\u00ED I\u010C oblasti emise z\u00E1\u0159en\u00ED (2-5 mikrometr\u016F). Bude vyu\u017Eito vybaven\u00ED i zku\u0161enost\u00ED z p\u0159edchoz\u00EDch EC a GA \u010CR projekt\u016F." . "17"^^ . "The idea of the project is to make use of selected physical characterisation techniques (low temperature luminiscence, X-ray diffraction, Raman spectroscopy, X-ray microanalysis, scanning electron and atomic force microscopy and transport measurements) for the study and optimisation of the heterointerfaces in epitaxial layers, heterostructures, multiple quantum wells and superlattices of AIIIBV semiconductors, namely binary, ternary and quaternary compounds (in the GaSb/InAs/GaAs/AlAs systems). These structures will be prepared using the one and only LP-MOVPE machine in the Czech Republic (AIXTRON 200). The main interest will be focused on the recombination processes at heteroboundaries of type I. and II., using photo and electroluminescence measurements and their theoretical analysis. New physical concepts for optimisation of coherent light sources for the mid infrared region (2-5 microns) should be the practical results."@en . "IAA1010807" . "Heterorozhran\u00ED polovodi\u010Dov\u00FDch l\u00E1tek AIIIBV - p\u0159\u00EDprava a charakterizace" . . "1"^^ . . "Poda\u0159ilo se p\u0159ipravit extr\u00E9mn\u011B tenk\u00E9 MOVPE polovodi\u010Dov\u00E9 vrstvy na b\u00E1zi A(III)B(V). Na z\u00E1klad\u011B na\u0161ich fyzik\u00E1ln\u00EDch m\u011B\u0159en\u00ED jsme navrhli p\u0159\u00EDslu\u0161n\u00E9 modely heterostruktur a v\u00FDsledky publikovali. P\u0159ibl\u00ED\u017Eili jsme se i k aplikaci realizac\u00ED InAs/GaAs QW laser\u016F."@cs . . "0"^^ . . .