. . . . . . "Laserov\u00E1 modifikace slo\u017Een\u00FDch polovodi\u010D\u016F a polovodi\u010Dov\u00FDch slitin" . . "0"^^ . . . . "0"^^ . . "1"^^ . "Ur\u010Den\u00ED stability jednotliv\u00FDch f\u00E1z\u00ED a chemick\u00E9ho slo\u017Een\u00ED povrch\u016F InSb, GaSb, jako funkce hustoty energie pulsn\u00EDho laserov\u00E9ho z\u00E1\u0159en\u00ED. Vliv okoln\u00ED atmosf\u00E9ry. Matematick\u00E9 modelov\u00E1n\u00ED. Rovnov\u00E1\u017En\u00E9 a nerovnov\u00E1\u017En\u00E9 podm\u00EDnky."@cs . . "http://www.isvav.cz/projectDetail.do?rowId=IAA1010719"^^ . "A mathematical model of pulsed-laser induced nonequilibrium melting and solidification of the compound semiconducting alloys will be developed allowing a numerical simulation of experimental time-resolved reflectivity (TRR) spectra. The segregation coefficient will be evaluated by statistical methods depending on the solidifications conditions. The conditions of the morphological stability of solidification will be derived depending on the laser pulse parameters and initial sample temperature and concentration, using the linear stability theory.The melting and solidification kinetics during pulse-laser irradiation will be monitored by TRR depending on pulse energy density and initial sample temperature. The resulting structure, chemical composition and orientation dependence of segregation coefficient will be determined by the common surface sensitive methods (LEED, AES, STM, AFM, RBS)."@en . . "Bude vytvo\u0159en model na popis nerovnov\u00E1\u017En\u00E9ho t\u00E1n\u00ED a solidifikace slo\u017Een\u00FDch polovodi\u010D\u016F a polovodi\u010Dov\u00FDch slitin, pomoc\u00ED kter\u00E9ho bude prov\u00E1d\u011Bna numerick\u00E1 simulace experiment\u00E1ln\u00EDch k\u0159ivek z\u00EDskan\u00FDch metodou \u010Dasov\u011B rozli\u0161en\u00E9 reflektivity (TRR). Pomoc\u00ED statistick\u00FDch metod bude stanoven segrega\u010Dn\u00ED koeficient v z\u00E1vislosti na podm\u00EDnk\u00E1ch solidifikace. Bude nalezena souvislost mezi morfologickou stabilitou a parametry laserov\u00E9ho z\u00E1\u0159en\u00ED, po\u010D\u00E1te\u010Dn\u00ED teplotou a slo\u017Een\u00EDm vzorku v r\u00E1mci line\u00E1rn\u00ED teorie stability.Kinetika t\u00E1n\u00ED a solidifikace bude sledov\u00E1na TRR metodou v z\u00E1vislosti na hustot\u011B energie laserov\u00E9ho z\u00E1\u0159en\u00ED a po\u010D\u00E1te\u010Dn\u00ED teplot\u011B vzorku. V\u00FDsledn\u00E1 struktura, chemick\u00E9 slo\u017Een\u00ED a z\u00E1vislost segrega\u010Dn\u00EDho koeficientu na orientaci bude ur\u010Dov\u00E1na metodami b\u011B\u017En\u00FDmi vefyzice povrch\u016F a tenk\u00FDch vrstev (LEED, AES, STM, AFM)." . "Laser processing of compound semiconductors and semiconducting alloys"@en . . "19"^^ . . "IAA1010719" . . "19"^^ .