"2"^^ . "70"^^ . "Using high spatial/temporal resolution, new electronic properties of Si, CdS and CdSe quantum dots and of microcrystalline Si films have been discovered and examined (spin relaxation, optical gain, emission and waveguide spectra, electrical transport)."@en . "http://www.isvav.cz/projectDetail.do?rowId=IAA1010316"^^ . "Properties of semiconductor microcrystals ( 100nm) and nanocrystals ( 10nm) can be tailored acording to specific demands. Electronic processes there occur on short distances and ultrafast time scale. This is attractive e.g. from the point of view of increasing speed of integration of micro- and optoelectronic devices. The project will be devoted to the preparation and experimental study of 1. Si and SiC microcrystalline films for photovoltaic solar cells and 2 CdS, CdSe and Si nanocrystals intended for future optoelectronic active elements. To achieve the scientific goal, equipments and methods developed recently in applicants laboratoires will be applied, namely: AFM and STM tip, femto- and picosecond laser spectroscopy, and luminiscence spectroscopy of single nanocrystals. Results of these experiments will contribute to understanding of novel electronic features in the microworld."@en . . . "microcrystalline silicon and silicon carbide; solar photovoltaics; charge transport; silicon and II-IV nanocrystals; atomic force microscopy; scanning tunneling mecroscopy; ultrafast laser spectroscopy; luminiscence; single nanocrystal spectroscopy"@en . "microcrystalline silicon and silicon carbide" . . " solar photovoltaics" . "Vlastnosti polovodi\u010Dov\u00FDch materi\u00E1l\u016F ve tvaru mikrokrystal\u016F (v\u011Bt\u0161\u00ED 100nm) a nanokrastal\u016F (v\u011Bt\u0161\u00ED 10nm) lze m\u011Bnit podle zadan\u00FDch po\u017Eadavk\u016F. Elektronov\u00E9 d\u011Bje zde prob\u00EDhaj\u00ED na kr\u00E1tk\u00FDch vzd\u00E1lenostech a v ultrarychl\u00E9 \u010Dasov\u00E9 \u0161k\u00E1le. To je aplika\u010Dn\u011B velmi \u017E\u00E1douc\u00ED nap\u0159. z hlediska zvy\u0161uj\u00EDc\u00ED se integrace mikro- a optoelektronick\u00FDch sou\u010D\u00E1stek, N\u00E1pln\u00ED projektu bude p\u0159\u00EDprava a experiment\u00E1ln\u00ED studium 1. mikrokrystalick\u00FDch vrstev Si a SiC pro fotovoltaick\u00E9 slune\u010Dn\u00ED \u010Dl\u00E1nky a 2. nanokrystalick\u00FDch vrstev CdS, CdSe a Si pro budouc\u00ED optoelektronick\u00E9 aktivn\u00ED prvky. Budou pou\u017Eita za\u0159\u00EDzen\u00ED a metodick\u00E9 postupy vyvinut\u00E9 ned\u00E1vno v laborato\u0159\u00EDch navrhovatel\u016F, zejm\u00E9na: AFM a STM topografick\u00E1 m\u011B\u0159en\u00ED dopln\u011Bn\u00E1 o mapov\u00E1n\u00ED lok\u00E1ln\u00ED elektrick\u00E9 vodivosti, emise sv\u011Btla indukovan\u00E1 hrotem STM, femto- a pikosekundov\u00E1 laserov\u00E1 spektroskopie a luminiscen\u010Dn\u00ED spektroskopie individu\u00E1ln\u00EDch mikro/nanokrystal\u016F. Tyto experimenty p\u0159isp\u011Bj\u00ED k pochopen\u00ED nov\u00FDch rys\u016F elektronick\u00FDch d\u011Bj\u016F (transport, relaxace, rekombinace) v mikrosv\u011Bt\u011B." . "2007-02-27+01:00"^^ . . . . "2007-12-01+01:00"^^ . . "IAA1010316" . " luminiscence" . " atomic force microscopy" . . " silicon and II-IV nanocrystals" . . " scanning tunneling mecroscopy" . . "Microcrystalline and nanocrystalline semiconductors for photonics:Electronic processes on the scales of nanometers and femtoseconds"@en . "Mikrokrystalick\u00E9 a nanokrystalick\u00E9 polovodi\u010De pro fotoniku:elektronov\u00E9 d\u011Bje ve \u0161k\u00E1le nanometr\u016F a femtosekund" . " ultrafast laser spectroscopy" . . "2003-01-01+01:00"^^ . . . "2013-06-28+02:00"^^ . . . "1"^^ . . . . . "0"^^ . " charge transport" . "70"^^ . "Metodami vysok\u00E9ho prostorov\u00E9ho/\u010Dasov\u00E9ho rozli\u0161en\u00ED jsme objevili a prostudovali nov\u00E9 elektron. vlastnosti kvant. te\u010Dek Si, CdS, CdSe a tenk\u00FDch vrstev mikrokrystalick\u00E9ho Si (spinov\u00E1 relaxace, optick\u00FD zisk, emisn\u00ED a vlnovodn\u00E1 spektra, elektrick\u00FD transport)."@cs .