"0"^^ . "Byl vyvinut model nanoskopick\u00E9ho transportu n\u00E1boje a vysv\u011Bleny ultrarychl\u00E9 transportn\u00ED jevy v nanostrukturovan\u00FDch TiO2, ZnO pokryt\u00FDch fotocitliv\u00FDm barvivem, v por\u00E9zn\u00EDm TiO2, v nanokrystalick\u00E9m CdS, v mikrokrystalick\u00E9m Si a v t\u011B\u017Ek\u00FDmi ionty oz\u00E1\u0159en\u00E9m InGaAs"@cs . . "photoconductivity; charge carrier dynamics; terahertz; time-resolved spectroscopy; ultrafast semiconductors; disordered semiconductors; thin films"@en . "Studium ultrarychl\u00E9 vodivosti a transportu n\u00E1boje v tenk\u00FDch polovodiv\u00FDch vrstv\u00E1ch pomoc\u00ED terahertzov\u00E9 spektroskopie" . "2011-03-18+01:00"^^ . . " ultrafast semiconductors" . " terahertz" . . . . "2011-12-31+01:00"^^ . "Study of ultrafast photoconductivity and charge transport in thin semiconducting layers using terahertz spectroscopy"@en . " time-resolved spectroscopy" . . "2013-06-28+02:00"^^ . . . "http://www.isvav.cz/projectDetail.do?rowId=IAA100100902"^^ . . . . . "IAA100100902" . . . "15"^^ . "15"^^ . " charge carrier dynamics" . "2009-01-01+01:00"^^ . " disordered semiconductors" . "0"^^ . "A nanoscopic model of charge transport was developed and ultrafast transport phenomena in nanostructured photosensitized TiO2 and ZnO, mesoporous TiO2, nanocrystalline CdS, microcrystalline Si and heavy-ion irradiated InGaAs were explained."@en . . "1"^^ . "Ultrafast conductivity in semiconductors and the related nanoscopic charge transport are the key issues for the development of optoelectronic applications. Time-resolved optical pump \u2013 THz probe experiments constitute a contact-free method of the study of these processes. In semiconductors the probing radiation exhibits a strong interaction with free or weakly localized mobile charges. Within the proposed project we will study (i) picosecond and femtosecond response of charge carriers in semiconductor films for ultrafast optoelectronics (in semiconductors with small gap and ultrafast carrier trapping) and (ii) nanoscopic transport of charges immediately after photo-excitation in disordered semiconducting systems for solar cell technologies (nanostructured Si, donor-acceptor organic films). We will develop adequate models for the interpretation of our experimental data which are expected to improve the overall understanding of the fast processes in disordered systems."@en . "photoconductivity" . "Ultrarychl\u00E1 odezva vodivosti v polovodi\u010D\u00EDch a s n\u00ED spojen\u00FD nanoskopick\u00FD transport n\u00E1boje p\u0159edstavuj\u00ED jednu z kl\u00ED\u010Dov\u00FDch ot\u00E1zek pro rozvoj optoelektronick\u00FDch aplikac\u00ED. \u010Casov\u011B rozli\u0161en\u00FD experiment optick\u00E9 excitace a terahertzov\u00E9ho sondov\u00E1n\u00ED p\u0159edstavuje bezkontaktn\u00ED metodu studia t\u011Bchto proces\u016F. Sondovac\u00ED z\u00E1\u0159en\u00ED siln\u011B interaguje zejm\u00E9na s voln\u00FDmi nebo slab\u011B lokalizovan\u00FDmi pohybliv\u00FDmi n\u00E1boji. V r\u00E1mci navrhovan\u00E9ho projektu budeme studovat (i) pikosekundovou a femtosekundovou odezvu nositel\u016F n\u00E1boje v polovodiv\u00FDch vrstv\u00E1ch pro ultrarychlou optoelektroniku (v polovodi\u010D\u00EDch s mal\u00FDm gapem a ultrarychl\u00FDm z\u00E1chytem elektron\u016F) a (ii) nanoskopick\u00FD transport n\u00E1boje bezprost\u0159edn\u011B po excitaci fs pulsem v neuspo\u0159\u00E1dan\u00FDch polovodiv\u00FDch syst\u00E9mech pro technologii sol\u00E1rn\u00EDch \u010Dl\u00E1nk\u016F (nanostrukturovan\u00FD Si, donor-akceptorov\u00E9 organick\u00E9 filmy). Pro interpretaci v\u00FDsledk\u016F navrhneme adekv\u00E1tn\u00ED modely, kter\u00FDmi chceme p\u0159isp\u011Bt k celkov\u00E9mu pochopen\u00ED rychl\u00FDch proces\u016F v neuspo\u0159\u00E1n\u00FDch syst\u00E9mech." . . . .