. . "Ballistic electron emission microscopy and spectroscopy of InAs quantum dots prepared by different technologies"@en . . "GPP102/11/P824" . . . "Self assembled InAs quantum dots in GaAs embedded between GaAlAs barriers will be studied by ballistic electron emission microscopy and spectroscopy. On self assembled quantum dots with dimensionally same base, prepared by different technologies, spectroscopy characteristics will be compared. Measurements will be realized on structures grown by molecular beam epitaxy (MBE) and by metalorganic vapor phase epitaxy MOVPE."@en . . . "Deferred Final Report"@en . "http://www.isvav.cz/projectDetail.do?rowId=GPP102/11/P824"^^ . "2015-12-31+01:00"^^ . "quantum dots electronic structure balistic electron emission microscopy and spectroscopy metalorganic vapor phase epitaxy molecular beam epitaxy"@en . . . "Balistick\u00E1 elektronov\u00E1 emisn\u00ED mikroskopie a spektroskopie kvantov\u00FDch InAs te\u010Dek p\u0159ipraven\u00FDch r\u016Fzn\u00FDmi technologiemi" . . "1"^^ . . "2015-02-09+01:00"^^ . . "2"^^ . "0"^^ . . . "2"^^ . . "Pomoc\u00ED balistick\u00E9 elektronov\u00E9 emisn\u00ED mikroskopie a spektroskopie budou studov\u00E1ny samouspo\u0159\u00E1dan\u00E9 InAs kvantov\u00E9 te\u010Dky v GaAs vlo\u017Een\u00E9 mezi GaAlAs bariery. Na samouspo\u0159\u00E1dan\u00FDch kvantov\u00FDch te\u010Dk\u00E1ch s rozm\u011Brov\u011B shodnou z\u00E1kladnou p\u0159ipraven\u00FDch r\u016Fznou technologi\u00ED budou srovn\u00E1ny spektroskopick\u00E9 charakteristiky. M\u011B\u0159en\u00ED budou realizov\u00E1na na kvantov\u00FDch te\u010Dk\u00E1ch rosten\u00FDch technikou epitaxe z molekul\u00E1rn\u00EDch svazk\u016F (MBE) a epitax\u00ED z organokovov\u00FDch slou\u010Denin (MOVPE)." . "0"^^ . "Odlo\u017Een\u00E1 z\u00E1v\u011Bre\u010Dn\u00E1 zpr\u00E1va"@cs . . . . . "2011-01-01+01:00"^^ .