. "2010-12-31+01:00"^^ . . . . . "III-V semiconductors; liquid phase epitaxy; rare-earth elements"@en . "2008-01-01+01:00"^^ . "0"^^ . " liquid phase epitaxy" . . "V r\u00E1mci projektu jsme se v\u011Bnovali p\u0159\u00EDprav\u011B, charakterizaci a aplikaci epitaxn\u00EDch vrstev InP p\u0159ipraven\u00FDch s p\u0159\u00EDdavkem vz\u00E1cn\u00FDch zemin (RE) do kapaln\u00E9 f\u00E1ze. Byla dokon\u010Dena jedine\u010Dn\u00E1 studie vlivu deseti r\u016Fzn\u00FDch RE a jejich oxid\u016F na vlastnosti epitaxn\u00EDch vrstev InP. Tato studie byla motivov\u00E1na neexistenc\u00ED systematick\u00E9ho v\u00FDzkumu v oblasti III-V polovodi\u010D\u016F p\u0159ipraven\u00FDch kapalnou epitax\u00ED s RE v  r\u016Fst"@cs . "III-V semiconductors" . "1"^^ . . "0"^^ . "InP Epitaxial Layers Prepared from Rare-Earth Treated Melts: Growth, Characterization, and Application in Radiation Detectors."@en . "2010-04-16+02:00"^^ . "GP102/08/P617" . . . . "Vysoce \u010Dist\u00E9 vrstvy InP budou p\u0159ipraveny metodou kapaln\u00E9 epitaxe s p\u0159\u00EDm\u011Bs\u00ED prvk\u016F vz\u00E1cn\u00FDch zemin (RE) do r\u016Fstov\u00E9 taveniny. RE v r\u016Fstov\u00E9 tavenin\u011B getruj\u00ED m\u011Blk\u00E9 p\u0159\u00EDm\u011Bsi. P\u0159ednostn\u011B jsou getrov\u00E1ny donorov\u00E9 p\u0159\u00EDm\u011Bsi. P\u0159i zvy\u0161ov\u00E1n\u00ED obsahu RE v tavenin\u011B m\u00E1 p\u0159ednostn\u00ED getrov\u00E1n\u00ED donor\u016F za n\u00E1sledek zm\u011Bnu vodivosti z typu n na typ p. Takto m\u016F\u017Eeme p\u0159ipravit vrstvy typu p s v\u00FDznamn\u011B ni\u017E\u0161\u00EDmi koncentracemi voln\u00FDch nosi\u010D\u016F. Tyto vrstvy jsou vhodn\u00E9 pro p\u0159\u00EDpravu Schottkyho kontakt\u016F s vysokou v\u00FD\u0161kou bari\u00E9ry. Tlust\u00E9 vrstvy typu p s kvalitn\u00EDmi Schottkyho kontakty mohou nal\u00E9zt vyu\u017Eit\u00ED ve struktur\u00E1ch pro detekci ionizuj\u00EDc\u00EDho z\u00E1\u0159en\u00ED. Pochopen\u00ED vz\u00E1jemn\u00E9ho vztahu mezi elektrick\u00FDmi a optick\u00FDmi m\u011B\u0159en\u00EDmi a chemickou anal\u00FDzou vrstev provedenou metodou SIMS napom\u016F\u017Ee stanoven\u00ED dominantn\u00EDch p\u0159\u00EDm\u011Bs\u00ED a povede ke zlep\u0161en\u00ED technologie r\u016Fstu. Bude podrobn\u011B pops\u00E1n proces getrace spolu s vysv\u011Btlen\u00EDm zm\u011Bny vodivostn\u00EDho typu." . "Epitaxn\u00ED vrstvy InP p\u0159ipraven\u00E9 z taveniny obsahuj\u00EDc\u00ED prvky vz\u00E1cn\u00FDch zemin: r\u016Fst, charakterizace a aplikace v detektorech z\u00E1\u0159en\u00ED." . . . "http://www.isvav.cz/projectDetail.do?rowId=GP102/08/P617"^^ . "The project was devoted to the preparation, characterization, and application of InP epitaxial layers prepared from rare-earth (RE) treated liquid phase. A unique study of the impact of ten different REs and their oxides on the properties of InP epitaxial layers was completed. This study was motivated by the lack of systematic research in the field of liquid phase epitaxy (LPE) grown III-V semico"@en . "2015-03-20+01:00"^^ . . . "High-purity InP LPE layers with rare-earth (RE) admixtures will be prepared. Introduction of RE in the melt leads to simultaneous gettering of shallow impurities. Donor impurities are preferentially gettered. The preferential gettering results in conductivity conversion from n- to p-type when increasing the RE content in the melt. P-type layers with substantially lowered free carrier concentrations can be grown. These layers are suitable for preparation of a Schottky contact with a large barrier height. Thick layers of p-type conductivity with a high quality Schottky contact can be applied in ionizing radiation detector structures. Results of the electrical and optical measurements will be correlated with chemical analysis performed by SIMS in order to designate the dominant residual impurities and improve the growth technology. Detailed description of the gettering phenomenon will be given together with the explenation of the conductivity conversion."@en . . "6"^^ . "6"^^ . . . . . .