. "8"^^ . "Navrhovan\u00FD projekt se zam\u011B\u0159\u00ED na epitaxn\u00ED r\u016Fst heterostruktur s velk\u00FDm m\u0159\u00ED\u017Ekov\u00FDm nep\u0159izp\u016Fsoben\u00EDm na por\u00E9zn\u00EDch substr\u00E1tech polovodi\u010D\u016F A3B5 a na depozici kovov\u00FDch a polovodi\u010Dov\u00FDch materi\u00E1l\u016F do mikrop\u00F3r\u016F. P\u0159\u00EDprava vysoce kvalitn\u00EDch m\u0159\u00ED\u017Ekov\u011B nep\u0159izp\u016Fsoben\u00FDch epitaxn\u00EDch vrstev je jedn\u00EDm z nejn\u00E1ro\u010Dn\u011Bj\u0161\u00EDch \u00FAkol\u016F v\u00A0 polovodi\u010Dov\u00E9 technologii. Elektrochemicky p\u0159ipraven\u00E9 mikro a nanop\u00F3ry v InP a GaAs budou zar\u016Fst\u00E1ny metodami LPE a MOCVD za \u00FA\u010Delem vyhodnocen\u00ED (a) konverze p\u00F3r\u016F do mikrobublin a mikrolamel, (b) o\u010Dek\u00E1van\u00E9ho sn\u00ED\u017Een\u00ED hustoty dislokac\u00ED pror\u016Fstaj\u00EDc\u00EDch do deponovan\u00E9 vrstvy a (c) rozlo\u017Een\u00ED deformace v oblasti heterorozhran\u00ED. Plazmov\u00E1 chemick\u00E1 depozice a elektochemick\u00E1 depozice bude pou\u017Eita pro nan\u00E1\u0161en\u00ED ZnO do mikrop\u00F3r\u016F a na por\u00E9zn\u00ED GaP substr\u00E1ty za \u00FA\u010Delem studia optick\u00FDch vlastnost\u00ED t\u011Bchto struktur. Platina bude elektrochemicky nan\u00E1\u0161ena do por\u00E9zn\u00EDch s\u00EDt\u00ED jako\u017Eto prvn\u00ED krok k p\u0159\u00EDprav\u011B metamateri\u00E1l\u016F. Strukturn\u00ED, elektrick\u00E9 a optick\u00E9 vlastnosti budou studov\u00E1ny pomoc\u00ED optick\u00E9 mikroskopie, SEM, AFM, SIMS, mokr\u00E9ho lept\u00E1n\u00ED, m\u011B\u0159en\u00ED Hallova jevu, fotoluminiscence a mikrokatodoluminiscence." . " AFM" . . "8"^^ . " SIMS" . " InAs" . . " epitaxy" . " GaP" . "Kompenzace neizoperiodi\u010Dnosti v heterop\u0159echodech na mikro a nanopor\u00E9zn\u00EDch polovodi\u010D\u00EDch A3B5 a depozice kov\u016F a polovodi\u010D\u016F do mikrop\u00F3r\u016F" . . . " MOVPE" . "2010-01-01+01:00"^^ . " micropore" . " InP" . "Project contributed to the progress in preparation of high quality epitaxial layers of materials on lattice-mismatched semiconductor substrates to enhance the range of useful device on given substrate. New way of preparation and other results of the project may have important applications in electronics. Four impacted papers were published."@en . . "Lattice mismatch compensation in heteroepitaxy on micro and nanoporous A3B5 semiconductors and deposition of metals and semiconductors into micropores"@en . . . " InGaAs" . " semiconductors" . . . "porous" . " liquid" . " epitaxial" . . " GaAs" . . " A3B5" . . . . " SEM" . . . "2014-01-30+01:00"^^ . . "Projekt p\u0159isp\u011Bl k pokroku v p\u0159\u00EDprav\u011B vysoce kvalitn\u00EDch epitaxn\u00EDch vrstev materi\u00E1l\u016F na polovodi\u010Dov\u00FDch substr\u00E1tech s m\u0159\u00ED\u017Ekov\u00FDm nep\u0159\u00EDzpusoben\u00EDm, kter\u00E9 umo\u017E\u0148uj\u00ED roz\u0161\u00ED\u0159en\u00ED rozsahu realizovateln\u00FDch sou\u010D\u00E1stek na dan\u00E9m substr\u00E1tu. Nov\u00FD zp\u016Fsob p\u0159\u00EDpravy a dal\u0161\u00ED v\u00FDsledky projektu mohou m\u00EDt zna\u010Dn\u00E9 aplikace v elektronice. Publikov\u00E1ny \u010Dty\u0159i impaktovan\u00E9 \u010Dl\u00E1nky."@cs . "2012-03-30+02:00"^^ . " growth" . "http://www.isvav.cz/projectDetail.do?rowId=GAP108/10/0253"^^ . " phase" . " ZnO" . "GAP108/10/0253" . "1"^^ . "1"^^ . "0"^^ . . "porous; A3B5; semiconductors; InP; GaP; GaAs; InAs; InGaAs; ZnO; micropore; anodization; heteroepitaxy; MOVPE; epitaxial; growth; liquid; phase; epitaxy; SEM; AFM; SIMS; photoluminescence"@en . " anodization" . " heteroepitaxy" . "2012-12-31+01:00"^^ . "This project focuses on the epitaxial growth of highly mismatched heterostructures on porous substrates of A3B5 semiconductors and on the deposition of metallic and semiconductor materials into micropores. Preparation of high quality lattice mismatched epitaxial layers is one of the most challenging tasks in semiconductor technology. Electrochemically prepared micro and nanopores in InP and GaAs will be overgrown by LPE and MOCVD to evaluate (i) the conversion of pores into microbubbles and microlamellae, (ii) the expected reduction of dislocation density in the overgown layer, (iii) the strain distribution at heterointerfaces. Remote plasma CVD and electrochemical deposition will be used to deposit ZnO into micropores and onto porous GaP substrates to study the unique optical properties of these structures. Pt will be deposited electrochemically into porous networks as the first step towards the preparation of metamaterials. Structural, electrical, and optical properties will be investigated by optical microscopy, SEM, AFM, SIMS, wet etching, Hall measurement, PL, and microCL."@en . .