. . . "This project aims at the development of semiconductor Quantum Dots (QDs) based on InAs/GaAs and later from GaSb, using MOVPE. Optical and electrical properties of QD structures are often determined more by the size and shape, than by the material of the QDs, because of the comparable size of QDs and de Broglie\u00B4s wavelength for electrons and holes. The type of the structure, (number of QD layers and their separation in the vertically correlated structures) will play important role in the optimisation of QD structure parameters. The above mentioned properties are determined by the technology of preparation. The QD parameters will be adjusted by changing the growth rate, precursor ratio, time regime of the growth and by other technological parameters like the substrate orientation. The dominant application of QD is in the field of light sources. In the frame of this project we want to investigate QD structures also for use in the detectors and eventually memories."@en . "0"^^ . "2010-01-01+01:00"^^ . " MOVPE" . "GAP102/10/1201" . . "Kvantov\u00E9 te\u010Dky pro detektory a jin\u00E9 sou\u010D\u00E1stky" . "Quantum" . . . . . "Results ot he project correspond to planned aims. The team reached a number of valuable results in the field of design and measurement of parameters of quantum dots. Results are adequate to team size and project budget. The project results were published 7 times in peer-reviewed journals. The funds were used according to the GA\u010CR rules."@en . "http://www.isvav.cz/projectDetail.do?rowId=GAP102/10/1201"^^ . . . "Quantum dots for detectors and other devices"@en . . . . . "Quantum; dots; GaAs/InAs; MOVPE; photoluminiscence; AFM"@en . . . "2012-03-30+02:00"^^ . "V\u00FDsledky \u0159e\u0161en\u00ED projektu odpov\u00EDdaj\u00ED deklarovan\u00FDm z\u00E1m\u011Br\u016Fm projektu. Bylo dosa\u017Eeno \u0159ady hodnotn\u00FDch v\u00FDsledk\u016F v oblasti p\u0159\u00EDpravy a m\u011B\u0159en\u00ED parametr\u016F struktur kvantov\u00FDch te\u010Dek. V\u00FDsledky jsou adekv\u00E1tn\u00ED velikosti t\u00FDmu a rozpo\u010Dtu projektu. V\u00FDsledky projektu byly publikov\u00E1ny mj. v 7 impaktovan\u00FDch \u010Dasopisech. Finan\u010Dn\u00ED prost\u0159edky byly \u010Derp\u00E1ny podle pravidel GA\u010CR."@cs . "C\u00EDlem tohoto projektu je \u0159\u00EDzen\u00E1 p\u0159\u00EDprava polovodi\u010Dov\u00FDch kvantov\u00FDch te\u010Dek (QD) na b\u00E1zi InAs/GaAs, pozd\u011Bji eventu\u00E1ln\u011B i GaSb, metodou organokovov\u00E9 epitaxe (MOVPE). D\u016Fle\u017Eit\u00E9 optick\u00E9 a elektrick\u00E9 vlastnosti struktur s QD jsou, vzhledem k srovnateln\u00E9 velikosti QD s de Broglieho vlnovou d\u00E9lkou elektron\u016F a d\u011Br, ur\u010Dov\u00E1ny jejich velikost\u00ED a tvarem \u010Dasto v\u00EDce ne\u017E vlastn\u00EDm materi\u00E1lem z n\u011Bho\u017E jsou QD p\u0159ipraveny. Typ struktury (hustota QD, po\u010Det a vzd\u00E1lenost vrstev s QD ve vertik\u00E1ln\u011B uspo\u0159\u00E1dan\u00FDch struktur\u00E1ch) bude tak\u00E9 hr\u00E1t velkou roli p\u0159i optimalizaci parametr\u016F struktur. V\u00FD\u0161e popsan\u00E9 parametry ur\u010Duje technologick\u00FD postup p\u0159\u00EDpravy. Tyto parametry QD hodl\u00E1me \u0159\u00EDdit teplotou a rychlost\u00ED r\u016Fstu, pom\u011Brem r\u016Fstov\u00FDch prekursor\u016F, \u010Dasov\u00FDm pr\u016Fb\u011Bhem epitaxe a dal\u0161\u00EDmi technologick\u00FDmi parametry (nap\u0159. orientac\u00ED a p\u0159\u00EDpravou substr\u00E1tu). Dosud je p\u0159evl\u00E1daj\u00EDc\u00ED vyu\u017Eit\u00ED QD v\u00A0oblasti zdroj\u016F z\u00E1\u0159en\u00ED, v r\u00E1mci tohoto projektu se chceme tak\u00E9 v\u011Bnovat optimalizaci QD struktur pro detektory, p\u0159\u00EDpadn\u011B pam\u011Bti." . "15"^^ . " dots" . "15"^^ . " GaAs/InAs" . . . "2012-12-31+01:00"^^ . "2014-01-30+01:00"^^ . "0"^^ . . "1"^^ . " photoluminiscence" .