"1"^^ . . . . "Projekt byl p\u0159ed\u010Dasn\u011B ukon\u010Den na \u017E\u00E1dost \u0159e\u0161itele. Byl spln\u011Bn na vynikaj\u00EDc\u00ED \u00FArovni. Jeho odborn\u00FD p\u0159\u00EDnos je v\u00FDznamn\u00FD. Z\u00E1v\u011Bre\u010Dn\u00E1 karta je vypracov\u00E1na kvalitn\u011B. Z projektu je zpracov\u00E1n nadpr\u016Fm\u011Brn\u00FD po\u010Det publikac\u00ED. Pravidla GA \u010CR byla dodr\u017Eov\u00E1na, hospoda\u0159en\u00ED"@cs . . "5"^^ . . . . . "5"^^ . . "GA202/99/P064" . "http://www.isvav.cz/projectDetail.do?rowId=GA202/99/P064"^^ . . . "Interface morphology is substantial for optical and electrical properties of multilayers. The project of this grant focuses on the study of interfaces of II/VI-, III/V- and IV/IV-type multilayers, mainly GaAs/AlAs and SiGe/Si, grown by MBE and MOVPE. Except for the randomly rough interfaces, the following structures are present in these samples: 1. large lateral terraces correlated between interfaces, and 2. self-organized low-dimensional structures (quantum wires and dots). Specular and diffuse X-rareflectivity will be employed thus contributing by this technique to the main grant of the supervisor of this post-doc grant. Laboratory as well as synchrotron X-ray sources will be used for performing the experiments. Measured data will be compared to the relevant structural models. Relations between the interface morphology and crystal orientation and growth parameters will be analysed. The results of experiments will lead to the optimization of epitaxial growth and sample preparation."@en . "Study of the interface morphology in epitaxial multilayers by X-ray reflection"@en . "0"^^ . . . . "Morfologie rozhran\u00ED je d\u016Fle\u017Eit\u00E1 pro optick\u00E9 a elektrick\u00E9 vlastnosti multivrstev. V r\u00E1mci tohoto projektu budu studovat rozhran\u00ED multivrstev typu II/VI, III/V a IV/IV, p\u0159ev\u00E1\u017En\u011B GaAs/AlAs a SiGe/Si, p\u011Bstovan\u00FDch metodami MBE a MOVPE. Dan\u00E9 vzorky obsahuj\u00ED nejen n\u00E1hodn\u011B drsn\u00E1 rozhran\u00ED, ale i velk\u00E9 later\u00E1ln\u00ED terasy, kter\u00E9 jsou vz\u00E1jemn\u011B korelov\u00E1ny mezi sousedn\u00EDmi rozhran\u00EDmi, a d\u00E1le samouspo\u0159\u00E1dan\u00E9 n\u00EDzkodimenzion\u00E1ln\u00ED struktury (kvantov\u00E9 dr\u00E1ty a body). Ke studiu rozhran\u00ED pou\u017Eiji metodu rentgenov\u00E9 reflexe ve spekul\u00E1rn\u00EDm i dif\u00FAzn\u00EDm m\u00F3du, \u010D\u00EDm\u017E se zajist\u00ED person\u00E1ln\u00ED obsazen\u00ED pro aplikaci t\u00E9to metody v r\u00E1mci nosn\u00E9ho projektu. Experimenty budou provedeny za pou\u017Eit\u00ED laboratorn\u00EDch i synchrotronov\u00FDch zdroj\u016F RTG z\u00E1\u0159en\u00ED. Nam\u011B\u0159en\u00E1 data budou srovn\u00E1na s p\u0159\u00EDslu\u0161n\u00FDmi strukturn\u00EDmi modely a bude analyzov\u00E1na souvislost mezi morfologi\u00ED rozhran\u00ED a krystalovou orientac\u00ED a parametry r\u016Fstu vzork\u016F. V\u00FDsledky experiment\u016F povedou k optimalizaci parametr\u016F epitaxn\u00EDho r\u016Fstu." . "Studium morfologie rozhran\u00ED epitaxn\u00EDch multivrstev RTG reflex\u00ED" . "0"^^ .