. "The aim of the grant proposal is to determine the impact of the QD overgrowth process on the structure and electronic properties of buried InAs/GaAs QD systems prepared by MOVPE and emitting around 1.55 mm. InxGa1-xAs and GaAs1-ySby capping layers will be used to keep the emission wavelength around 1.55 mm by protecting the QDs from drastic size changes during their overgrowth. The relations between the In content of the InxGa1-xAs capping layer, the surface reconstruction and the photoluminescence (PL) will be analyzed and the growth parameters optimized to achieve the desired wavelength and a high PL intensity. In the case of the GaAs1-ySby capping, the aim is the same. More over, the transition between the (spatially) direct band gap alignment (InAs QD /GaAs) and the indirect alignment (InAs QD/GaAs1-ySby, y > 14\u00A0%) will be studied both theoretically (using the envelope function formalism) and experimentally. The results will provide the Sb concentration necessary for obtaining a high intensity of the ground state PL. In addition, free QDs and QDs with thin SRLs will be covered by metallic overlayers - we expect changes of the electronic states of the QDs, depending on the work function of the metal. The metallization will also allow us to study the electric-field dependence of the PL and the electric properties of the heterostructure with the Schottky contact between the overlayer and the SRL."@en . . . . "2"^^ . "2011-04-16+02:00"^^ . . . . . . "\u0158e\u0161en\u00ED projektu prob\u011Bhlo podle pl\u00E1nu jak z hlediska odborn\u00E9ho tak i z hlediska \u010Derp\u00E1n\u00ED finan\u010Dn\u00EDch prost\u0159edk\u016F."@cs . . "2015-03-02+01:00"^^ . "GaAs, InAs, elektronov\u00E9 stavy, kvantov\u00E9 te\u010Dky"@en . "C\u00EDlem projektu je ur\u010Dit vliv p\u0159ekryt\u00ED InAs/GaAs kvantov\u00FDch te\u010Dek (QD) p\u0159ipraven\u00FDch metodou MOVPE s emis\u00ED ~ 1,55 mikronu na jejich morfologii a elektronov\u00E9 stavy. Optimalizac\u00ED parametr\u016F InGaAs a GaAsSb kryc\u00EDch vrstev bude minimalizov\u00E1n ne\u017E\u00E1douc\u00ED modr\u00FD posuv luminiscence QD p\u0159i jejich p\u0159ekryt\u00ED." . " elektronov\u00E9 stavy" . "2009-01-01+01:00"^^ . "2011-12-31+01:00"^^ . "Vliv kryc\u00EDch vrstev na elektronov\u00E9 stavy v kvantov\u00FDch te\u010Dk\u00E1ch" . . . . . . . . "18"^^ . "18"^^ . " InAs" . "GaAs" . "The project gone according to plan both in terms of expertise and in terms of disbursement of funds."@en . "0"^^ . "GA202/09/0676" . . . "Impact of capping layers on electronic states in quantum dots"@en . "http://www.isvav.cz/projectDetail.do?rowId=GA202/09/0676"^^ . "1"^^ .